Epitaxial 1.3 – 1.55 µm VCSELs

Funded by UC-MICRO with Agilent Technologies

Objectives

Objectives of this program are to develop device structures as well as growth technologies of 1.3 – 1.55 µm VCSELs that can have impact on future data links for applications ranging from 10 Gigabit-Ethernet to access networks. We propose all-epitaxial structures for low-cost, highly manufacturable and reliable devices. Our proposed structures consist of AlGaAsSb/AlAsSb mirrors and InAlGaAs active regions, and they are epitaxially grown lattice-matched to InP. The PI's group has already demonstrated the electrically pumped, broad-area devices under pulsed operation, and this program develops key technologies for high temperature CW operation as well as high output power.

1.55 µm, InP-lattice matched VCSEL

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Updated on May 17, 2001 by CJL