Sub 20 nm scaling of Si CMOS faces considerable physical and technological obstacles.  It is imperative to investigate strong potential alternatives. III-V materials  have high electron mobilities and offer the potential of surpassing the 22 nm SIA roadmap goals.

Challenges faced in developing III-V devices as an enhancement to Si CMOS include developing gate insulator with acceptable surface state density and minimal impact upon mobility, and growth and integration of into a Si process.  Device-level challenges include the effect of the light electron on vertical confinement, transconductance, and tunneling, and the impact of vertical confinement on subthreshold slope and DIBL.  Robust counterparts of Si fabrication processes must be developed for III-V CMOS.

To address these substantial challenges, the SRC nonclassical CMOS center has formed a team of expert researchers in III-V materials, devices and fabrication processes.  Research tasks include development of low-surface-state-density high-K gate dielectrics, device design and modeling, development of fabrication process modules and device fabrication and characterization, and integration of III-V materials onto Silicon
 

The National Nanotechnology Infrastructure Network ( NNIN ) is an integrated partnership of thirteen user facilities, supported by NSF, providing unparalleled opportunities for nanoscience and nanotechnology research.

The network  provides extensive support in nanoscale fabrication, synthesis, characterization, modeling, design, computation and hands-on training. in an open, hands-on environment, available to all qualified users.
 

Need a research tool, but would rather not buy it? You can rent it in a new nanofabrication facility with 12,700 ft² of clean room space to work in!

Affordable rates provide you with the tools you need, as well as training and support from our dedicated and knowledgeable staff, that is tailored to your specific research needs.

We support a broad line of lithography, thin-film deposition, reactive ion etching, and characterization tools in support of device fabrication for a variety of materials, including InP, GaAs, GaN, SiC, Si, and other novel materials.