Current Projects (last updated 6/5/15)




Prof. M. Rodwell


High-Frequency Electronics Group




Maps & Directions


Group members


Open Positions


Current Projects






Ph.D. Theses



The group is active in
-THz InP bipolar transistors
- nm electron devices: III-V MOSFETs, low-voltage-logic devices.
-optical, mm-wave, and mixed-signal IC design using THz InP HBTs
-optical & mm-wave IC design in SiGe and CMOS.

Present funded research programs include

DARPA DAHI CS-Stack: DAHI densely integrates fast III-V technologies with Si CMOS VLSI e are (1) developing high-beta InP HBTs for this technologies and (2) developing InP/CMOS mm-wave transceiver designs.  Collaboration with Teledyne.

DARPA DAHI Advanced circuits: In this related program, we are designing fast (2~20GHz signal frequency) mixed-signal ICs in a technology integrating InP HBT and CMOS VLSI. Collaboration with Teledyne.

DARPA DODOS: Working with Coldren group, with UC Davis, OE-waves, Stanford, and Freedom Photonics, we are  developing optical phase-lock  loops for optical frequency synthesis with sub-Hz resolution. Our tasks include IC design and optical PLL integration.

DARPA ACT: We are developing broadly-tunable (2-20GHz or better) high dynamic range transmitter and receiver ICs. The architecture is dual-conversion with a 100GHz first IF. The technology is Teledyne 130nm (1.1THz) InP HBT

DARPA THETA Extension: We are developing ultra-low-power yet high-dynamic range transmitters and receivers for W-band and V-band applications. The technology is Teledyne 130nm (1.1THz) InP HBT.

NSF mm-wave communcations: We are developing transciever ICs, RF and baseband, for endpoint and backhaul signal distibution in mobile networks. V, E, and W are the bands of interest. The technologies are SiGe and CMOS. Collaborations with Madhow, Buckwalter and Zheng at UCSB, and faculty at Stanford and UW.

DARPA ASTIR:  Working with Teledyne, we are developing passive but digitally controlled retroreflectors for beam-steering in mm-wave imaging systems.

Electron Devices: we have several proposals under review to continue our work in THz and nm electron devices, emphasizing III-V technologies.



















Department of Electrical and Computer Engineering