Current Projects (last updated 12/31/15 )

 

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Prof. M. Rodwell

 

High-Frequency Electronics Group

 

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The group is active in
- fast IC design for mm-wave and fiber-optic systems.
- mm-wave system design.
- nm electron devices for VLSI.
- very high speed transistors for mm-wave and similar ICs.

Present funded research programs include

DARPA DAHI CS-Stack: DAHI densely integrates fast III-V technologies with Si CMOS VLSI.  We are (1) developing high-beta InP HBTs for this technologies and (2) developing InP/CMOS mm-wave transceiver designs.  Collaboration with Teledyne. IC design

DARPA DAHI Advanced circuits: In this related program, we are designing fast (2~20GHz signal frequency) mixed-signal ICs in a technology integrating InP HBT and CMOS VLSI. Collaboration with Teledyne. IC design

DARPA DODOS: Working with Coldren group, with UC Davis, OE-waves, Stanford, and Freedom Photonics, we are  developing optical phase-lock  loops for optical frequency synthesis with sub-Hz resolution. Our tasks include IC design and optical PLL integration. IC design

NSF Optical phase-lock-loops: Working with Coldren group, we are  developing phase-locked optical sources for fiber-optic systems. Our tasks include IC design and optical PLL integration. IC design

DARPA ACT: We are developing broadly-tunable (2-20GHz or better) high dynamic range transmitter and receiver ICs. The architecture is dual-conversion with a 100GHz first IF. The technology is Teledyne 130nm (1.1THz) InP HBT. IC design

DARPA THETA Extension: We are developing ultra-low-power yet high-dynamic range transmitters and receivers for W-band and V-band applications. The technology is Teledyne 130nm (1.1THz) InP HBT. IC design

NSF mm-wave communications: We are developing transceiver ICs, RF and baseband, for endpoint and backhaul signal distribution in mobile networks. V, E, and W are the bands of interest. The technologies are SiGe and CMOS. Collaborations with Madhow, Buckwalter and Zheng at UCSB, and faculty at Stanford and UW. IC & system design

DARPA ASTIR:  Working with Teledyne, we are developing passive but digitally controlled retroreflectors for beam-steering in mm-wave imaging systems at >200 GHz. IC design

NSF Low-voltage FETs: Teamed with Purdue (Profs. Povolotski and Klimeck) we are designing, and building, novel ultra-low-voltage, hence ultra-low-power nm transistors for future generations of VLSI. Electron devices

SRC/Starnet THz HBTs: we are developing InP HBTs at the 32nm scaling generation, targeting ~3THz transistor cutoff frequencies and useful circuit gain to ~1.5-2 THz. Electron devices

DARPA Ultrafast CMOS: Building upon our VLS III-V  NMOS development, we are (1) developing low-parasitic, very-high-speed self-aligned III-V N-MOSFETs and (2) developing a complementary III-V PMOS device. The goal is medium-scale CMOS digital logic at extremely high digital clock rates. Electron devices

 

 

 

 

 

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Department of Electrical and Computer Engineering

UCSB