|
High
Frequency Electronics Group |
||||||||
|
|
|
|
|
|||||
|
|
|
High-Frequency III-V Transistors: Exploiting the superior
transport properties on InP, we are developing transistors with 500 GHz
cutoff frequencies. Transistor bandwidth is extended through epitaxial,
lithographic, and contact resistivity scaling. We explore the limits of
transistor bandwidth. We also develop manufacturable device structures &
processes |
|
|||||
|
|
Exploiting the transistors
we have developed, we explore the limits of high frequency circuits. We seek
to attain digital well above 200 GHz, to build amplifiers above 300 GHz, to
build oscillators above 500 GHz. We seek to show that complex and
functionally sophisticated circuits can operate at frequencies well above 200
GHz. We also seek to exploit wideband transistors to improve lower-frequency
(microwave) systems. |
|||||||
|
|
Both Si CMOS and SiGe
BiCMOS processes offer 250 GHz transistor cutoff frequencies (2005). While
noise and breakdown are poorer than comparable III-V processes, there are key
emerging mm-wave applications for which the large feasible integration scales
of CMOS are a decisive advantage. These include short-range Gb/s mm-wave
radio, 40 Gb/s fiber optics, and sensor networks |
|||||||