High Frequency Electronics Group

 

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Prof. M. Rodwell

 

High-Frequency Electronics Group

 

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THz  Transistors:

With appropriate advances in materials, design, and fabrication processes,  III-V transistors can reach cutoff frequencies of at least 2-3 THz. 

Such transistors will enable future generations of ICs for wireless communications and imaging systems operating  at even far-infrared (0.3-3 THz) frequencies. 

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Ultra-High Frequency ICs:

We seek to explore the limits of high frequency circuits, exploiting both our own research THz transistor processes and fast nm  CMOS VLSI processes.

We seek to extend the frequency range of RF-ICs well into the far-infrared.   We seek to develop high power amplifiers and phased arrays, so as to enable radio systems of useful capacity and range at mm-wave and higher frequencies. We seek to exploit the high bandwidth of modern IC processes to support high-rate optical communications.


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nm transistors and III-V CMOS:

As gate lengths approach 16 nm and oxide equivalent thicknesses drop below 1 nm, continued scaling of transistors in VLSI becomes progressively more difficult. We seek to develop high-current and low-operating-voltage transistors for scaling generations beyond 16 nm. 

Department of Electrical and Computer Engineering

UCSB