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University of California, Santa Barbara
Department of Electrical and Computer Engineering

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Integrated Circuit Design and Fabrication

ECE 120B – Spring 2016

Instructor: Dr. Ilan Ben-Yaacov

Schedule: Tues/Thurs 9:30 - 10:45am, PHELPS 1508

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Announcements

* 5/15/16:  Homework 5 is now posted below.

* 4/28/16:  Homework 4 is now posted below.

* 4/14/16:  Homework 3 is now posted below.

* 4/4/16:  Homework 2 is now posted below.

* 4/4/16:  TA lab hours during weeks 2-4 will be held in the ECI lab at the following days/times:

* Alex So: MW 2-5pm

* Alex Hunter: TR 2-5pm

* 3/28/16: Welcome to ECE 120B.  Homework 1 along with various other handouts are available on the class website.

 

 

Syllabus (click here for syllabus in .pdf format)

Time:                       Tues/Thurs 9:30 - 10:45 a.m.

Place:                      PHELPS 1508

Instructor:               Dr. Ilan Ben-Yaacov, ESB Room 2213, ext 5295, ilan[at]engineering.ucsb.edu

Office Hours:          Tues/Thurs 10:50-11:50am or by appointment, ESB Room 2213

 

Teaching Assistant:     Alexander Hunter (adhunter[at]umail.ucsb.edu), office/lab hours TBA

                                         Alexander So (alexanderso[at]umail.ucsb.edu), office/lab hours TBA

 

Lab Supervisor:     Bob Hill, Engineering II Room 1141, ext 4142, bob[at]ece.ucsb.edu

 

Required Text:  Device Electronics for Integrated Circuits, 3rd edition, by Richard S. Muller and Theodore I. Kamins, 2002, ISBN 0-471-59398-2.  Handouts and class notes will complement the text.

 

Prerequisites: ECE 132, ECE 137A, and ECE 124B/120A or equivalent, or consent of the instructor.

 

Topics to be covered:

* MOS transistors

* p-n junctions and heterojunctions

* Bipolar transistors / HBT’s

* JFETs, HFETs

* VLSI technologies

* Advanced processing techniques

 

Course Description:  There will be homework assignments, a midterm, a presentation and laboratory work. Laboratory work will consist of designing, fabricating and testing of something interesting such as a simple MOS circuit. You will design the entire process sequence, simulate the expected device characteristics and circuit performance, and compare it with your experimental results. Homework, midterm, and laboratory project/presentation will each contribute 15%, 30%, and 55%, respectively, to the final grade. The laboratory will include a final report and a presentation to the class.

 

Homework Assignments – turn into box on 3rd floor of HFH

Homework 1 – due 4/5/16 by 5:00pm (there is nothing to turn in for this assignment)

 

Homework 2 – due 4/14/16 by 5:00pm           

 

Homework 3 – due 4/28/16 by 5:00pm

 

Homework 4 – due 5/12/16 by 5:00pm           

 

Homework 5 – due 5/24/16 by 5:00pm           

 

 

Homework Solutions (requires password)

 

Midterm

Midterm will be on Thursday, 5/26/16.  You will be allowed a calculator and 3 pages of notes (8.5 by 11 inch, you may write on front and back).  BRING A BLUE BOOK TO RECORD YOUR ANSWERS!  Midterm review will be in class on Tuesday 5/24/16.

 

Handouts

L-Edit tutorial - note: L-Edit has been installed on all of the PCs in the ECI lab.

L-Edit Template File (will be emailed to everyone in the class)

IC Design Project

120A NMOS Process

HEMT Handout 1        HEMT Handout 2

Tasker / Hughes paper on effects of source and drain resistance on RF performance

 

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