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Nanoelectronics Research Lab (NRL) researchers release compact model for atomically-thin transistors

April 2nd, 2015

image from NEEDS
Researchers from ECE’s Nanoelectronics Research Lab (NRL) have recently released the first physics-based SPICE compatible compact model for 2D material based transistors in collaboration with NEEDS deployed on nanoHUB.org

Two-dimensional (2D) and layered semiconductors belonging to the family of transition metal dichalcogenides (TMD) have emerged as promising channel materials for future unprecedented electronic, optoelectronic and sensor applications. 2D semiconducting TMDs offer several key advantages over bulk semiconductors (or 1D materials such as nanotubes and nanowires) with variable but uniform band gaps.

Besides, these atomically-thin TMDs have inherent flexibility and transparency, rendering them attractive to display electronics. These materials additionally have pristine surfaces that can boost device performance, especially in nanoscale transistors.

Compact models are essential for building circuits and systems. Recently, ECE researchers from the Nanoelectronics Research Lab, led by Professor Kaustav Banerjee have built the first detailed compact model specifically designed for such atomically-thin channel field-effect transistors (FETs). Their physics based and SPICE compatible compact model can be employed for efficient exploration of circuits based on 2D TMD FETs as well as for performance evaluation and optimization of such transistors. The UCSB 2D FET compact model provides a crucial platform for building future nanomodular systems based on emerging 2D layered materials.

The compact model has been released on the NEEDS (Nano-Engineered Electronic Device Simulation Node) website hosted by Purdue University’s nanoHub, by ECE PhD student and NRL member Wei Cao.

Nano-Engineered Electronic Device Simulation Node - NEEDS

UCSB 2D TMD FET Model

Nanoelectronics Research Lab (NRL)