Realizing good electrical contacts is critical to harnessing the full potential of emerging two-dimensional materials including graphene and various transition metal dichalcogenides for electronics, optoelectronics, and spintronics applications. The study examines the nature of such contacts and illuminates pathways to optimizing the injection of both charge and spin into atomically-thin semiconductors.
Members from ECE’s Nanoelectronics Research Lab, in collaboration with researchers at the Swiss Federal Institute of Technology-Lausanne (EPFL), have recently published a comprehensive study on the nature of charge and spin injection into atomically-thin two-dimensional (2D) semiconductors in the prestigious journal Nature Materials.
2D materials belonging to the graphene family, various transition metal dichalcogenides including molybdenum disulphide (MoS2) and tungsten diselenide (WSe2), as well as other 2D semiconductors such as monolayer Black Phosphorus have displayed unique potential in overcoming the limitations of conventional bulk materials (such as silicon and III-V semiconductors) for a number of exciting applications in electronics and optoelectronics, as well as spintronics and valleytronics. However, ensuring low-resistance or optimal contacts to such materials is the primary hindrance to using this technology.
Professor Banerjee’s group have made seminal contributions toward advancing the understanding of contacts to 2D materials and have also spearheaded the use of these materials for overcoming power dissipation and other fundamental challenges in nanoscale transistors, interconnects and sensors.
With an impact factor of 36.5, Nature Materials is the #1 ranked research journal in materials science covering all areas of materials including their nanoscale, biological and energy aspects.