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UMESH K. MISHRA, DIRECTOR
Electrical and Computer Engineering
Department
University of California
Santa Barbara, CA 93106
Tel: (805) 893-3586
Fax: (805) 893-8714 or 3262
E-mail: mishra@ece.ucsb.edu
Ph.D., Cornell University
Electronics and Photonics: high-speed transistors, semiconductor device physics, quantum electronics, optical control, design and fabrication of millimeter-wave devices, in situation processing and integration techniques.
Professor Mishra joined the College's ECE Department in 1990 from the Department of Electrical and Computer Engineering at North Carolina State University. A recognized leader in the area of high-speed field effect transistors, Dr. Mishra has made major contributions at every laboratory and academic institution for which he has worked, including: Hughes Research Laboratories in Malibu, California; the University of Michigan at Ann Arbor; and General Electric, Syracuse, New York. His current research areas attempt to develop an understanding of novel materials and extend them into applications. He is the Director of the AFOSR PRET Center for Non-Stoichiometric Materials and Applications and of the ONR MURI Center (IMPACT), which relates to the application of SiC and GaN based transistors for power amplification. In 1989 Dr. Mishra received the Presidential Young Investigator Award from the National Science Foundation. In 1992 he received the Young Scientist of the Year Award from the International Symposium on GaAs and Related Compounds. He was elected as a Fellow of IEEE in 1995.
HERBERT KROEMER, ASSOCIATE DIRECTOR
Electrical and Computer Engineering &
Materials Departments
University of California
Santa Barbara, CA 93106
Tel: (805) 893-3078
Fax: (805 893-7990 or 3262
E-mail: kroemer@ece.ucsb.edu
Ph.D., University of Göttingen, Germany
Electronics and Photonics: semiconductor heterostructures, their physics, technology, and device applications; molecular beam epitaxy; superconductor-semiconductor hybrid structures.
Professor Kroemer has worked on the physics and technology of compound semiconductors and semiconductor devices in a number of research laboratories in Germany and the US He joined the UCSB faculty in 1976, and has played a pivotal role in steering the department into its pioneering research program on GaAs and other III-V compound semiconductors. He is the originator of several important semiconductor devices concepts, such as the drift-transistor concept, the double- heterojunction injection laser, and other heterojunction concepts. Since coming to UCSB his research has increasingly shifted towards new material combinations for future device applications, typically grown by molecular beam epitaxy, such as quantum well and superlattice structures in the InAs/GaSb/AlSb system. Dr. Kroemer was made a Fellow of the IEEE in 1970 and the APS in 1976. He received the Senior Research Award from the American Society for Engineering Education (1982), the Heinrich Welker Medal (1982), the GaAs Symposium Award (1982), and made UCSB Faculty Research Lecturer (1985). He was awarded an Honorary Doctorate in Engineering from the University of Aachen, Germany (1985), the Jack Morton Award of IEEE (1986), the Donald W. Whittier Chair in Electrical Engineering (1986), and the Alexander von Humboldt Research Award (1994). In 1997 he was elected to the National Academy of Engineering.
PRET RESEARCH FOCUS: Under the PRET program, Dr. Kroemer concentrates on the properties of low-temperature-grown Antimonide-based materials, such as Aluminum Antimonide, and Arsenide-Antimonide mixed-anion systems, as well as on non-stoichiometric interface defects at the interfaces of these materials with Indium Arsenide.
JOHN BOWERS
Electrical and Computer Engineering
Department
University of California
Santa Barbara, CA 93106
Tel: (805) 893-8447
Fax: (805) 893-7990 or 3262
E-mail: bowers@ece.ucsb.edu
Ph.D., Stanford University
Electronics and Photonics: high-speed photonic and electronic devices, optoelectronic integrated circuits, laser physics and modelocking phenomena, compound semiconductor materials and processing.
Professor Bowers joined UCSB in 1987 after working at AT&T Bell Laboratories on optoelectronic devices and fiber optic systems. He is a leader in high speed semiconductor lasers and photonic integrated circuits. His interests range from dynamics of carriers in quantum wells to traveling wave microwave effects in lasers and modulators. His Ultrafast Optoelectronics Research group is also active in novel photodetectors and imaging systems. A portion of his research is on terabit/s fiber optic systems utilizing advanced optoelectronic devices. Prof. Bowers is Director of the Multidisciplinary Optical Switching Technology (MOST) Center, and a member of the Optoelectronics Technology Center and the NSF Center for Quantized Electronic Structures (QUEST). Prof. Bowers was awarded the IEEE LEOS William Striefer Award, the NSF Presidential Young Investigator Award, Univ. of Minn. Sigma Xi's Thomas F. Andrews Prize and was an IEEE LEOS Distinguished Lecturer. He is a Fellow of the IEEE and APS.
PRET RESEARCH FOCUS: First & second response of LTGaAs. Novel high speed photodetectors being LTGaAs. Properties of LTAlAs.
ARTHUR GOSSARD
Materials & Electrical and Computer
Engineering Departments
University of California
Santa Barbara, CA 93106
Tel: (805) 893-2686
Fax: (805) 893-8502
E-mail: gossard@engineering.ucsb.edu
BA Harvard College, 1956 Ph.D. Univ. of California Berkeley, 1960 Member, National Academy of Engineering Fellow, American Physical Society Winner, APS Oliver Buckley Condensed Matter Physics Prize
Arthur Gossard received his bachelor's degree in physics summa cum laude in 1956 from Harvard University and his Ph.D. in physics from University of California, Berkeley (1960). He was a member of the technical staff of AT&T Bell Laboratories from 1960 to 1987 and has been Professor of Materials and Electrical and Computer Engineering at University of California, Santa Barbara since 1987. He is author or co-author of 600 technical papers and 14 patents. His research involves the growth of artificially structured materials by molecular beam epitaxy. His special interests are the growth of quantum wells and superlattices and their applications to high performance electrical and optical devices. He grew the first alternate monolayer artificial superlattices in semiconductors and the first modulation doped quantum wells. He was codiscoverer of the quantum confined Stark effect and the fractional quantization of the Hall effect. He is a fellow of the American Physical Society, a member of the National Academy of Engineering, and a recipient of the Oliver Buckley Condensed Matter Physics prize of the American Physical Society.
PRET RESEARCH FOCUS: Molecular beam epitaxy growth of non-stoichiometric compound semiconductors for applications as barriers and passivating materials for electron devices and application in photomixers for generation of coherent submillimeter wavelength radiation in the Terahertz frequency regime. Working on management of size and location of metallic precipitates and on fusion technologies for enhanced power handling and power output in photomixers.
EVELYN HU
Electrical and Computer Engineering &
Materials Departments
University of California
Santa Barbara, CA 93106
Tel: (805) 893-2368
Fax: (805) 893-8170 or 3262
E-mail: hu@ece.ucsb.edu
Ph.D., Columbia University
Director, QUEST, Nanotech
Electronics and Photonics: high-resolution fabrication techniques for semiconductor device structures, process-related materials damage, contact/interface studies, superconductivity.
Before joining UCSB in 1984, Professor Hu worked at AT&T Bell Laboratories, developing microfabrication and nanofabrication techniques to facilitate the study of superconducting and semiconducting devices and circuits. She has continued those research themes at UCSB, through a variety of collaborative efforts, examining processes critical for the fabrication and operation of superconducting, electronic and optical devices. In particular, she has focused on ion-assisted chemical etching techniques having high spatial resolution, photo-driven processing tuned to the unique optical properties of the materials, and passivation treatments to enhance optical and electrical properties of structures at submicron dimensions. She has studied the formation of high quality, heterogeneous interfaces, such as those between semiconductors and superconductors, oxide and semiconductor, or two non lattice-matched semiconductors. She is currently serving as Director of (QUEST), the NSF Science and Technology Center for Quantized Electronic Structures. She as well directs Nanotech, the UCSB component of the NSF National Nanofabrication Users Network. She has served as Vice Chair (1989-92), and subsequently Chair (1992-94) of the ECE Department. She received the Tau Beta Pi Outstanding Faculty Award in ECE for 1989-90. Professor Hu is a Fellow of the APS and IEEE. In 1995, she was awarded an honorary Doctor of Engineering from Glasgow University.
PRET RESEARCH FOCUS: Seeking the correlation between the microstructure in LT GaAs and its influence on macroscopic processing.
JAMES SPECK
Materials Department
University of California
Santa Barbara, CA 93106
Tel: (805) 893-8005
Fax: (805) 893-8486
E-mail: speck@surface.ucsb.edu
Sc.D., Massachusetts Institute of Technology
Electronic and Inorganic Materials (transmission electron microscopy, X-ray diffraction, thin films, materials science).
Professor Speck was a postdoctoral researcher at MIT prior to joining the UCSB faculty. His research centers on the understanding of structural evolution in epitaxial growth. Systems currently under study include oxides-on-semiconductors, ferroelectrics, and a broad range of semiconductor systems. Much of the work centers on understanding both equilibrium and non-equilibrium defect formation including domain patterns in ferroelectric films and misfit and threading dislocation formation in all classes of epitaxial films. He is also strongly involved with a range of growth processes including solution routes (sol-gel), pulsed laser deposition, and collaboratively on MBE and MOCVD. Much of the experimental work is centered about state-of-the-art transmission electron microscopy and X-ray diffraction. He is currently the director of the Materials Departments Electron Microscopy Facility.
PRET RESEARCH FOCUS: Professor Speck's work focuses on understanding the role of non-stoichiometry in threading dislocation reduction in lattice mismatched heteroepitaxy. Additionally, he is collaboratively working on the role of non-stoichiometry in reducing processing damage and the role of non-stoichiometry in internal oxide of III-V arsenides.