The Center for Non-Stoichiometric Semiconductors is led by UCSB with one primary industrial partner, the Hughes Research Laboratories, and two associate members, Hewlett-Packard and Motorola.  The purpose of the Center (sponsored by the Air Force Office of Scientific Research's "Partnership for Research Excellence and Transition" program - PRET) is to understand the growth, and the electronic and optoelectronic properties of non-stoichiometric compound semiconductors, and to further their applications by the following means:

• Formation of Non-Stoichiometric Materials (nucleation and growth of non-stoichiometric materials, dual-anion systems, dislocation dynamics).
  
  
• Characterization of Non-Stoichiometric Materials (bulk properties of non-stoichiometric materials, adjacency effects, processing and stability).
  
  
• Applications of Non-Stoichiometric Materials (high performance FETs/ICs, high performance lasers, vertically integrated mixed-mode ICs, lattice-mismatched growth).
  
  
• Development of the Science and Applications of Native Oxides of Compound Semiconductors (low power FETs, low turn-on voltage diodes, compound semiconductor on insulator technologies, compound semiconductor and Ge based CMOS).

  
  
  

  CNN COVERAGE OF BLUE LASER NOVEMBER 17, 1997

  
  
  

ECE DEPARTMENT  ||  COLLEGE OF ENGINEERING  ||   UCSB

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Last Update - 11/21/97