LT-GaAs PASSIVATION

Author:  Ramakrishna Vetury

[Questions regarding this research may be addressed to]:  vetury@atlantic.ece.ucsb.edu

I am currently working on investigating the mechanisms by which LT-GaAS passivation alleviates the electric field crowding at the gate in GaAs MESFETs.  LT-GaAs passivation has been shown to increase the dc breakdown voltage of the gate drain diode.  The experiments currently under way are expected to lead to a better understanding of the frequency dispersion effects of the LT-GaAs.

Back to PRET CENTER home page