"A hybrid AlGaInAs-silicon evanescent preamplifier and photodetector," H. Park, Y.-H. Kuo, A. W. Fang, R. Jones, O. Cohen, M. J. Pannicia, J. E. Bowers, Optics Express, Vol. 15, No. 21, OCTOBER 2007

"Uni-Traveling-Carrier Photodiodes with Increased Output Response and Low Intermodulation Distortion," J. Klamkin, A. Ramaswamy, Y.C. Chang, L. A. Johansson, M. M. Dummer, J. E. Bowers, S. P. DenBaars, L. A. Coldren, Microwave Photonics '07, Victoria, Canada,, OCTOBER 2007

"Characterization of Distortion in InGaAsP Optical Phase Modulators Monolithically Integrated with Balanced UTC Photodetector," M. N. Sysak, L. A. Johannson, J. Klamkin, L. A. Coldren, J. E. Bowers, Lasers and Electro-Optics Society 19th Annual Meeting, TuU2, OCTOBER 2006

"Nonlinear Behaviors of Low-Temperature-Grown GaAs-Based Photodetectors Around 1.3-ìm Telecommunication Wavelength," J. W. Shi, Y.-H. Chen, K.-G. Gan, Y.-J.Chiu; J.E. Bowers, M-C. Tien, T.-M. Liu, and C.-K. Sun, IEEE Photonics Technology Letters, vol 16, no. 1, pp 242-244, JANUARY 2004

"Recent Advances in Photodetectors with Distributed Optical Amplification," D. Lasaosa, D. Pasquariello, J. Piprek, and J. E. Bowers, SPIE Proceedings 5246-87, Active and Passive Optical Components for WDM Communications III, ITCOM, , SEPTEMBER 2003

"InP-based waveguide photodetector with integrated photon multiplication," D. Pasquariello, J. Piprek, D. Lasaosa, J. E. Bowers, SPIE Proceedings 5248-34, Semiconductor Optoelectronic Devices for Lightwave Communication, ITCOM, , SEPTEMBER 2003

"Physics of Waveguide Photodetectors with Integrated Amplification," J. Piprek, D. Lasaosa, D. Pasquariello, J. E. Bowers, SPIE Proceedings 4986-28, Physics and Simulation of Optoelectronics Devices XI, Photonics West, , JANUARY 2003

"Ultrahigh power-bandwidth-product performance of low-temperature-grown-GaAs based metal-semiconductor-metal traveling-wave photodetectors," K.-G. Gan, J.-W. Shi, Y.-H. Chen, C.-K. Sun, Y.-J. Chiu, J. E. Bowers, Applied Physics Letters, vol. 80, no. 21, pp. 4054-4056, MAY 2002

"High-Speed and High-Power Performances of LTG-GaAs Based Metal-Semiconductor-Metal Traveling-Wave-Photodetectors in 1.3 ìm wavelength regime," J.-W. Shi, Y.-H. Chen, K.-G. Gan, Y.-J. Chiu, C.-K. Sun, J. E. Bowers, IEEE Photonic Technology Letters, vol. 14, no. 3, pp. 363-365, MARCH 2002

"Taper Line Distributed Photodetectors," J.-W. Shi, C.-K. Sun, J. E. Bowers, Conference proceedings of IEEE/LEOS 14th Annual Meeting (LEOS 2001), paper TuEE 2, San Diego, CA., NOVERMBER 2001

"High power performance of ultrahigh bandwidth MSM TWPDs," J.-W. Shi, K.-G. Gan, Y.-J. Chiu, J. E. Bowers, C.-K. Sun, Conference Proceedings of IEEE/LEOS 14th Annual Meeting (LEOS 2001), paper ThAA 2, San Diego, CA., NOVERMBER 2001

"Bias dependent nonlinear response of LTG-GaAs based p-i-n/n-i-n traveling-wave photodetectors under long wavelength excitation," J.-W. Shi, Y.-J. Chiu, J. E. Bowers, Y.-H. Chen, S.-P. Tai, C.-K. Sun, Conference on Laser and Electro-Optics (CLEO/QELS'2001), paper CMD6, pp. 20-21, Baltimore, MD., JUNE 2001

"Ultrahigh bandwidth MSM traveling-wave photodetectors," J.-W. Shi, K.-G. Gan, Y.-J. Chiu, C.-K. Sun, Y.-J. Yang, J. E. Bowers, Conference on Laser and Electro-Optics (CLEO/QELS'2001), paper CWI5, p. 348, Baltimore, MD, JUNE 2001

"Self-aligned MSM low-temperature-grown GaAs traveling wave photodetector for 810 nm and 1230 nm," K.-G. Gan, J.-W. Shi, Y.-J. Chiu, C.-K. Sun, J. E. Bowers, Microwave Photonics Conference, Long Beach, CA, JANUARY 2001

"Self-aligned 0.8ps FWHM MSM traveling wave photodector using low-temperature-grown GaAs," K.-G. Gan, J.-W. Shi, Y.-J. Chiu, C.-K. Sun, J. E. Bowers, Ultrafast Electronics and Optoelectronics, , JANUARY 2001

"Ultra-high bandwidth (570GHz) Metal-Semiconductor-Metal Traveling-Wave-Photodetectors," J.-W. Shi, K.-G. Gan, Y.-J. Chiu, Y.-H. Chen, F. Bresson, C.-K. Sun, Y.-J. Yang, J. E. Bowers, Conference Proceeding of 2001 Asia-Pacific Microwave Conference, Taipei, Taiwan ROC, JANUARY 2001

"Modeling of traveling-wave amplification photodetectors," Daniel Lasaosa, Yi-Jen Chiu, Joachim Piprek, John E. Bowers, SPIE Proceedings 4283-64, Physics and Simulation of Optoelectronic Devices IX, Photonics, San Jose, CA, JANUARY 2001

"Traveling-wave Amplification Photodetector (TAP detector)," Daniel Lasaosa, Yi-Jen Chiu, Joachim Piprek, John E. Bowers, Conference Proceedings of IEEE/LEOS 13th Annual Meeting (LEOS 2000), Rio Grande, Puerto Rico, NOVERMBER 2000

"1.55ìm Absorption, High Speed, High Saturation Power, P-I-N Photodetector Using Low-Temperature Grown GaAs," Y.-J. Chiu, S.Z. Zhang, S.B. Fleischer, J.E. Bowers, U.K.Mishra, Microwave Photonics Meeting, Princeton, NJ, OCTOBER 1998

"LTG-GaAs Grown on Silicon Substrates for THz-Photomixer Applications," C. Kadow, A. Jackson, J. Ibbetson, A. Gossard, S. Fleischer, J.E. Bowers, Symposium on Nonstoichiometric III-V Compounds, Erlangen, Germany, OCTOBER 1998

"High-Speed Low-Temperature-Grown GaAs p-i-n Traveling-Wave Photodetector," Yi-Jen Chiu, Siegfried B. Fleischer, John E. Bowers, IEEE Photonics Technology Letters, vol. 10, no. 7, pp. 1012-1014, JULY 1998

"GaAs-based, 1.55 ìm high speed, high saturation power, low-temperature grown GaAs p-i-n photodetector," Yi-Jen Chiu, S.Z. Zhang, S.B. Fleischer, J.E. Bowers, U.K. Mishra, Electronics Letters, vol.34, no.12, pp. 1253-1255, JUNE 1998

"Ultrafast Transport Dynamics of p-i-n Photodetectors Under High Power Illumination," C.-K. Sun, I.H. Tan, J.E.Bowers, IEEE Photonics Technology Letters, vol. 10, no. 1, pp. 135-137, JANUARY 1998

"Ultrafast (370 GHz bandwidth) p-i-n traveling wave photodetector using low-temperature-grown GaAs," Yi-Jen Chiu, Siegfried B. Fleischer, Daniel Lasaosa, John E. Bowers, Applied Physics Letters, vol. 71, no. 17, pp. 2508-2510, OCTOBER 1997

"Design of Silicon Hetero-Interface Photodetectors," W. Wu, A. Hawkins and J. E. Bowers., Journal of Lightwave Technology, 15(8), 1608-1615, AUGUST 1997

"Wafer Fusion: Materials Issues and Device Results," A. Black, A. R. Hawkins, N. M. Margalit, D. I. Babic, A. L. Holmes, Jr., Y.-L. Chang, P. Abraham, J. E. Bowers and E. L. Hu, IEEE Journal of Selected Topics in Quantum Electronics, 3(3), 943-951, JUNE 1997

"20 GHz High Performance Si/InGaAs PIN Photodetector," B. F. Levine, A. R. Hawkins, S. Hiu, B. J. Tseng, C. A. King, L. A. Gruezke, R. W. Johnson, D. R. Zolnowski, and J. E. Bowers, Applied Physics Letters, 70(18), 2449-2451, MAY 1997

"Frequency Response of Avalanche Photodetectors with Separate Absorption," W. Wu, A. R. Hawkins, and J. E. Bowers, Journal of Lightwave Technology, 14(12), 2778-2785, DECEMBER 1996