"Ultrafast valence intersubband hole relaxation in InGaN multiple-quantum-well laser diodes," K.-G. Gan, C.-K. Sun, S. P. DenBaars, and J. E. Bowers, Applied Physics Letters, Vol. 85, No. 23, pp 4675-4677, JUNE 2004

"Femtosecond Carrier dynamics in InGaN multiple-quantum-well laser diodes under high injection levels," K.-G. Gan, J. E. Bowers, and Chi-Kuang Sun, LEOS, , JANUARY 2004

"Self-assembled ErAs Islands in GaAs: Growth and subpicosecond carrier dynamics," C. Kadow, S.B. Fleischer, J.P. Ibbetson, J.E. Bowers, A.C. Gossard, J.W. Dong, C.J. Palstrom, Applied Physics Letters, vol. 75, no. 22, pp. 3548-3550, NOVERMBER 1999

"Subpicosecond Carrier Dynamics in Low Temperature Grown GaAs on Si," C. Kadow, S.B. Fleischer, J.P.Ibbetson, J.E. Bowers, A.C. Gossard, Applied Physics Letters, vol. 75, no. 17, pp. 2575-2577, OCTOBER 1999

"Ultrafast Response of ErAs Islands in GaAs," C. Kadow, J.P. Ibbetson, S.B. Fleischer, A.C. Gossard, and J.E. Bowers, OSA Trends in Optics and Photonics, Ultrafast Electronics and Optoelectronics, vol. 28, J. Bowers, W. Knox, Eds., JANUARY 1999

"Characterization of InGaAs quantum dot lasers with a single quantum dot layer as an active region," R. Mirin, A. Gossard and J. E. Bowers, Elsevier Science B.V. Physica E Low-Dimensional Systems and Nanostructures, pp. 738-742, JANUARY 1998

"Optical investigations of the dynamic behavior of GaSb/GaAs quantum dots," C.-K. Sun, G. Wang, J. E. Bowers, B. Brar, H.-R. Blank, H. Kroemer, and M. H. Pilkuhn, Applied Physics Letters, vol. 68, no. 11, pp. 1543-1545, MARCH 1996