"Measurement of Gain, Group Index, Group Velocitty Dispersion, and Linewidth Enhancement Factor of an InGaN Multiple-Quantum-Well Laser Diode," K.-G. Gan, and J. E. Bowers, IEEE Photonics Technology Letters, Vol. 16, No. 5, pp. 1256-1258, MAY 2004

"Femtosecond Carrier dynamics in InGaN multiple-quantum-well laser diodes under high injection levels," K.-G. Gan, J. E. Bowers, and Chi-Kuang Sun, LEOS, , JANUARY 2004

"Ultraviolet picosecond optical pulse generation from a mode-locked InGaN laser diode," S. Gee, J. E. Bowers, Applied Physics Letters, vol. 79, no. 13, pp. 1951-1952, SEPTEMBER 2001

"Picosecond Carrier Transport and Capture for InGaN/GaN Single and Multiple Quantum Wells," S. B. Fleischer, S. Keller, A.C. Abare, L.A. Coldren, U.K. Mishra, S.P. DenBaars, and J.E. Bowers, SPIE Proceedings 3944-03, Physics and Simulation of Optoelectronic Devices VIII, R. Binder, P. Blood, M. Osinski, Eds., pp. 28-39, JANUARY 2000

"Large interband second-order susceptibilities in InxGa1–xN/GaN quantum wells," H. Schmidt, A. C. Abare, J. E. Bowers, S. P. Denbaars, and A. Imamoglu, Applied Physics Letters, vol. 75, no. 23, pp. 3611-3613, DECEMBER 1999

"Simulation and Optimization of 420 nm InGaN/GaN Laser Diodes," J. Piprek, R. Kehl Sink, M. A. Hansen, J. E. Bowers, S. P. DenBaars, SPIE Proceedings 3944-03, Physics and Simulation of Optoelectronic Devices VIII, Snowmass, CO, APRIL 1999

"Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth," S. F. Chichibu, H. Marchand, M. S. Minsky, S. Keller, P. T. Fini, J. P. Ibbetson, S. B. Fleischer, J. S. Speck, J. E. Bowers, E. Hu, U. K. Mishra, S. P. DenBaars, T. Deguchi, T. Sota, S. Nakamura, Applied Physics Letters, vol. 74, no. 10, pp. 1460-1462, MARCH 1999

"Effects of Si-doping in the barriers of InGaN multiquantum well purplish-blue laser diodes," S. Chichibu, D. A. Cohen, M. P. Mack, A. C. Abare, P. Kozodoy, M. Minsky, S. Fleischer, S. Keller, J. E. Bowers, U. K. Mishra, L. A. Coldren, D. R. Clarke, and S. P. DenBaars, Applied Physics Letters, vol. 73, no. 4, pp. 496-498, JULY 1998

"Growth and Properties of InGaN Nanoscale Islands on GaN," S. Keller, B.P. Keller, M.S. Minsky, J.E. Bowers, U.K. Mishra, S.P. DenBaars, W. Seifert, Journal of Crystal Growth, vol. 189/190, pp. 29-32,, JUNE 1998

"Cleaved and Etched Facet Nitride Laser Diodes," A. C. Abare, M. P. Mack, M. Hansen, R. K. Sink, P. Kozodoy, S. Keller, J. S. Speck, J. E. Bowers, U. K. Mishra, L. A. Coldren, S. P. DenBaars, IEEE Journal on Selected Topics in Quantum Electronics, vol. 4, no. 3, pp. 505-509, MAY 1998

"Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures," S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, T. Sota, Applied Physics Letters, vol. 73, no. 14, pp. 2006-2008, MARCH 1998

"Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence," M. S. Minsky, S. B. Fleischer, A. C. Abare, J. E. Bowers, E. L. Hu, S. Keller, S. P. Denbaars, Applied Physics Letters, vol. 72, no. 9, pp. 1066-1068, MARCH 1998