My reserach at UCSB focuses on the fundamental physical understanding of materials growth and characterization for III–V nMOSFETs below the 10 nm Lg node. Specifically, I am developing the techniques to grow devices with engineered Eigenenergy states by utilizing the highly anisotropic effective masses of the Γ– and L–valleys, thus addressing the density of states bottleneck while maintaining high injection and saturated electron velocities, which will be critical for devices at/below 10 nm gate–lengths. This requires atomically perfect growth of quantum wells of 0.5–2 nm thickness on (111) and (110) oriented surfaces in order to align either align Γ– and L–Eigenstates valleys or use multiple L–Eigenstates. I am also pioneering the understanding of physics and fabrication of extremely low–resistance Ohmic contacts between epitaxially regrown source/drain and two–dimensional channels for implementation of scaled Ohmic contact to III–V MOSFETs at the 10 nm Lg node.
I graduated in October 2009 from the Department of Electrical and Computer Engineering at the University of California, San Diego. Under the guidance of Prof. Ed Yu, my research was primarily concerned with scanned probe characterization of semiconductor nanostructures. During the 18 months prior to my graduation, I had the pleasure and challenge of learning to grow both thin films and nanowires by MOVPE under the guidance of Shadi Dayeh and Prof. Paul Yu.