SRC Nonclassical CMOS Research Center





Prof. M. Rodwell


High-Frequency Electronics Group




Maps & Directions









What is the SRC Center?

Sub 20 nm scaling of Si CMOS faces considerable physical and technological obstacles.  It is imperative to investigate strong potential alternatives. III-V materials  have high electron mobilities and offer the potential of surpassing the 22 nm SIA roadmap goals.

Challenges faced in developing III-V devices as an enhancement to Si CMOS include developing gate insulator with acceptable surface state density and minimal impact upon mobility, and growth and integration of into a Si process.  Device-level challenges include the effect of the light electron on vertical confinement, transconductance, and tunneling, and the impact of vertical confinement on subthreshold slope and DIBL.  Robust counterparts of Si fabrication processes must be developed for III-V CMOS.

To address these substantial challenges, the SRC nonclassical CMOS center has formed a team of expert researchers in III-V materials, devices and fabrication processes.  Research tasks include development of low-surface-state-density high-K gate dielectrics, device design and modeling, development of fabrication process modules and device fabrication and characterization, and integration of III-V materials onto Silicon


Areas of Research

Dielectrics ~ Paul McIntyre, Leader
MBE Growth and Characterization ~ Chris Palmstrom (UCSB)
Atomic Layer Deposition ~ Paul McIntyre (Stanford University)
Analysis and Characterization ~ Susanne Stemmer (UCSB)
Growth and Characterization ~ Andrew Kummel (UCSB)
Analysis and Modeling ~ Chris Van de Walle (UCSB)

Device Fabrication  ~ Mark Rodwell (UCSB)

Device Modeling~ Yuan Taur, Leader
Device Design ~ Yuan Taur (UCSD)
III-V Implecations for Design ~ Peter Asbeck (UCSD)
III-V Transport Modeling ~ Max Fischetti (Univer. of Mass., Amherst)

Integration ~ Chris Palmstrom, Leader
III-V Growth on Silicon ~ James Harris (Stanford University)
Selective Area Source/Drain Growth ~ Chris Palmstrom (UCSB)
Characterization and Dielectrics~ Suzanne Stemmer (UCSB)
III-V Channel Growth ~ Art Gossard (UCSB)


Department of Electrical and Computer Engineering