"Monolithic integration of III/V-based functionalities to CMOS-based Si-micro- and nanoelectronics"

Wolfgang Stolz, Professor, Philipps-Universität Marburg (University of Marburg); co-founder of NAsP III/V GmbH

December 8th (Friday), 9:00am
Engineering Science Building (ESB), Rm 2001
NOTE: time change to 9:00am

In recent years, the monolithic integration of III/V-semiconductor materials and heterostructures on CMOS-compatible (001) Si-substrate is gaining increasing interest for the realization of novel integrated circuits with improved electronic, optoelectronic or photonic functionalities.The principal challenges of the III/V-material integration on CMOS-compatible (001) Si-substrates will be reviewed and possible solutions for the high-quality deposition of III/V-layer stacks will be demonstrated for large area 300 mm (001) Si-wafers by applying low-temperature metal organic vapour phase epitaxy (MOVPE) processes. Examples of successfully developed technologies including defect-free GaP-on-Si-template wafers as well as novel lattice-matched Ga(NAsP)-based laser stacks for Si-photonics applications will be presented and discussed.

About Wolfgang Stolz:

Photo of Wolfgang Stolz Wolfgang Stolz is full professor and co-head of the Structure and Technology Research Laboratory (Material Sciences Center and Faculty of Physics, Philipps-University Marburg (Germany))(University of Marburg), Adjunct Professor at the Optical Sciences Center (University of Arizona, Tucson (USA)) and Chief Technology Officer (NAsP III/V GmbH Marburg (Germany)). His current fields of activities include the epitaxial growth for a wide range of III/V-compound semiconductor material systems and heterostructures by applying metal organic vapour phase epitaxy (MOVPE) as well as realization of novel device concepts for electronic, solar cell and laser applications in particular also integrated on CMOS-compatible (001) Si-substrates.

Hosted by: Professor John Bowers