Laser Integration for Silicon Photonics with Heteroepitaxy
Commercially, laser integration for silicon photonics has been based primarily on hybrid integration. Future large-scale photonic integrated circuits based on silicon photonics will greatly benefit from monolithic integration of laser sources by direct heteroepitaxy on silicon. Our group has developed novel techniques to grow low-defect-density gallium arsenide (GaAs) and indium phosphide (InP) on exact oriented…