Bei Shi received the Ph.D. degree under the supervision of Prof. Kei May Lau from The Hong Kong University of Science and Technology (HKUST) for his work on MOCVD growth III-V quantum dot lasers and III-V/Si heteroepitaxy, in 2018. Prior to that, he completed his undergraduate studies at Huazhong University of Science and Technology (Wuhan, China), with a BEng in optoelectronics in 2013. His research interests are mainly focused on monolithic integration of III-V optoelectronic devices on Si, epitaxial growth of quantum dot/dash and III-V nanostructures for integrated photonics circuits.