Douglas C. Oakley received the B.A. degree from the University of Maine, Orono, 1991, and the M.S. degree from the University of Massachusetts, Lowell, in 1996, both in physics. In the fall of 1996, he joined the Electro-Optical Materials and Devices Group at the MIT Lincoln Laboratory, Lexington, MA as an Assistant Research Staff, working on the growth of novel GaSb-based materials by OMCVD for the thermophotovoltaics research effort. Promoted to Associate Technical Staff February 2001, and became Team Lead in the InP-based OMCVD materials growth effort, producing advanced InP/InGaAs/InGaAsP-based avalanche photodiodes, p-i-n lasers, and modulator structures. In 2012 he joined the Advanced Imager Technology Group producing OMCVD grown material for single-photon-sensitive imagers LADAR sensors and large array Geiger-Mode Avalanche Photodiodes (GMAPDs).  Douglas also developed III/V materials for the Quantum Information and Integrated Nanosystems Group in support of the Photonic Integrated Circuits (PIC) development efforts. He formed a consulting company, OAKLEY MOCVD, LLC, in the Fall of 2016 and joined the UCSB ECE Department as a visiting Research Specialist in the Integrated Photonics Laboratory (iPL) assisting with OMCVD system operation, upgrades, maintenance, and materials growth in support of projects on InP PICs, heteroepitaxy on silicon for laser integration in silicon photonics, and novel nanoelectronics.