MOSIS WAFER ACCEPTANCE TESTS RUN: T4BK (MM_NON-EPI_THK-MTL) VENDOR: TSMC TECHNOLOGY: SCN018 FEATURE SIZE: 0.18 microns INTRODUCTION: This report contains the lot average results obtained by MOSIS from measurements of MOSIS test structures on each wafer of this fabrication lot. SPICE parameters obtained from similar measurements on a selected wafer are also attached. COMMENTS: DSCN6M018_TSMC TRANSISTOR PARAMETERS W/L N-CHANNEL P-CHANNEL UNITS MINIMUM 0.27/0.18 Vth 0.50 -0.53 volts SHORT 20.0/0.18 Idss 571 -266 uA/um Vth 0.51 -0.53 volts Vpt 4.7 -5.5 volts WIDE 20.0/0.18 Ids0 22.0 -5.6 pA/um LARGE 50/50 Vth 0.42 -0.41 volts Vjbkd 3.1 -4.1 volts Ijlk <50.0 <50.0 pA K' (Uo*Cox/2) 171.8 -36.3 uA/V^2 Low-field Mobility 398.02 84.10 cm^2/V*s COMMENTS: Poly bias varies with design technology. To account for mask bias use the appropriate value for the parameters XL and XW in your SPICE model card. Design Technology XL (um) XW (um) ----------------- ------- ------ SCN6M_DEEP (lambda=0.09) 0.00 -0.01 thick oxide 0.00 -0.01 SCN6M_SUBM (lambda=0.10) -0.02 0.00 thick oxide -0.02 0.00 FOX TRANSISTORS GATE N+ACTIVE P+ACTIVE UNITS Vth Poly >6.6 <-6.6 volts PROCESS PARAMETERS N+ P+ POLY N+BLK PLY+BLK M1 M2 UNITS Sheet Resistance 6.6 7.5 7.7 61.0 317.1 0.08 0.08 ohms/sq Contact Resistance 10.1 10.6 9.3 4.18 ohms Gate Oxide Thickness 40 angstrom PROCESS PARAMETERS M3 POLY_HRI M4 M5 M6 N_W UNITS Sheet Resistance 0.08 991.5 0.08 0.08 0.01 941 ohms/sq Contact Resistance 8.97 14.09 18.84 21.44 ohms COMMENTS: BLK is silicide block. CAPACITANCE PARAMETERS N+ P+ POLY M1 M2 M3 M4 M5 M6 R_W D_N_W M5P N_W UNITS Area (substrate) 998 1152 103 39 19 13 9 8 3 129 127 aF/um^2 Area (N+active) 8566 54 21 14 11 10 9 aF/um^2 Area (P+active) 8324 aF/um^2 Area (poly) 64 18 10 7 6 5 aF/um^2 Area (metal1) 44 16 10 7 5 aF/um^2 Area (metal2) 38 15 9 7 aF/um^2 Area (metal3) 40 15 9 aF/um^2 Area (metal4) 37 14 aF/um^2 Area (metal5) 36 1003 aF/um^2 Area (r well) 987 aF/um^2 Area (d well) 574 aF/um^2 Area (no well) 139 aF/um^2 Fringe (substrate) 244 201 18 61 55 43 25 aF/um Fringe (poly) 69 39 29 24 21 19 aF/um Fringe (metal1) 61 35 23 21 aF/um Fringe (metal2) 54 37 27 24 aF/um Fringe (metal3) 56 34 31 aF/um Fringe (metal4) 58 40 aF/um Fringe (metal5) 61 aF/um Overlap (P+active) 652 aF/um CIRCUIT PARAMETERS UNITS Inverters K Vinv 1.0 0.74 volts Vinv 1.5 0.78 volts Vol (100 uA) 2.0 0.08 volts Voh (100 uA) 2.0 1.63 volts Vinv 2.0 0.82 volts Gain 2.0 -23.33 Ring Oscillator Freq. D1024_THK (31-stg,3.3V) 338.22 MHz DIV1024 (31-stg,1.8V) 402.84 MHz Ring Oscillator Power D1024_THK (31-stg,3.3V) 0.07 uW/MHz/gate DIV1024 (31-stg,1.8V) 0.02 uW/MHz/gate COMMENTS: DEEP_SUBMICRON T4BK SPICE BSIM3 VERSION 3.1 PARAMETERS SPICE 3f5 Level 8, Star-HSPICE Level 49, UTMOST Level 8 * DATE: Jan 21/05 * LOT: T4BK WAF: 3004 * Temperature_parameters=Default .MODEL CMOSN NMOS ( LEVEL = 49 +VERSION = 3.1 TNOM = 27 TOX = 4E-9 +XJ = 1E-7 NCH = 2.3549E17 VTH0 = 0.3662648 +K1 = 0.5802748 K2 = 3.124029E-3 K3 = 1E-3 +K3B = 3.3886871 W0 = 1E-7 NLX = 1.766159E-7 +DVT0W = 0 DVT1W = 0 DVT2W = 0 +DVT0 = 1.2312416 DVT1 = 0.3849841 DVT2 = 0.0161351 +U0 = 265.1889031 UA = -1.506402E-9 UB = 2.489393E-18 +UC = 5.621884E-11 VSAT = 1.017932E5 A0 = 2 +AGS = 0.4543117 B0 = 3.433489E-7 B1 = 5E-6 +KETA = -0.0127714 A1 = 1.158074E-3 A2 = 1 +RDSW = 136.5582806 PRWG = 0.5 PRWB = -0.2 +WR = 1 WINT = 0 LINT = 1.702415E-8 +XL = 0 XW = -1E-8 DWG = -4.211574E-9 +DWB = 1.107719E-8 VOFF = -0.0948017 NFACTOR = 2.1860065 +CIT = 0 CDSC = 2.4E-4 CDSCD = 0 +CDSCB = 0 ETA0 = 3.335516E-3 ETAB = 6.028975E-5 +DSUB = 0.0214781 PCLM = 0.6602119 PDIBLC1 = 0.1605325 +PDIBLC2 = 3.287142E-3 PDIBLCB = -0.1 DROUT = 0.7917811 +PSCBE1 = 6.420235E9 PSCBE2 = 4.122516E-9 PVAG = 0.0347169 +DELTA = 0.01 RSH = 6.6 MOBMOD = 1 +PRT = 0 UTE = -1.5 KT1 = -0.11 +KT1L = 0 KT2 = 0.022 UA1 = 4.31E-9 +UB1 = -7.61E-18 UC1 = -5.6E-11 AT = 3.3E4 +WL = 0 WLN = 1 WW = 0 +WWN = 1 WWL = 0 LL = 0 +LLN = 1 LW = 0 LWN = 1 +LWL = 0 CAPMOD = 2 XPART = 0.5 +CGDO = 8.06E-10 CGSO = 8.06E-10 CGBO = 1E-12 +CJ = 9.895609E-4 PB = 0.8 MJ = 0.3736889 +CJSW = 2.393608E-10 PBSW = 0.8 MJSW = 0.1537892 +CJSWG = 3.3E-10 PBSWG = 0.8 MJSWG = 0.1537892 +CF = 0 PVTH0 = -1.73163E-3 PRDSW = -1.4173554 +PK2 = 1.600729E-3 WKETA = 1.601517E-3 LKETA = -3.255127E-3 +PU0 = 5.2024473 PUA = 1.584315E-12 PUB = 7.446142E-25 +PVSAT = 1.686297E3 PETA0 = 1.001594E-4 PKETA = -2.039532E-3 ) * .MODEL CMOSP PMOS ( LEVEL = 49 +VERSION = 3.1 TNOM = 27 TOX = 4E-9 +XJ = 1E-7 NCH = 4.1589E17 VTH0 = -0.3708038 +K1 = 0.5895473 K2 = 0.0235946 K3 = 0 +K3B = 13.8642028 W0 = 1E-6 NLX = 1.517201E-7 +DVT0W = 0 DVT1W = 0 DVT2W = 0 +DVT0 = 0.7885088 DVT1 = 0.2564577 DVT2 = 0.1 +U0 = 103.0478426 UA = 1.049312E-9 UB = 2.545758E-21 +UC = -1E-10 VSAT = 1.645114E5 A0 = 1.627879 +AGS = 0.3295499 B0 = 5.207699E-7 B1 = 1.370868E-6 +KETA = 0.0296157 A1 = 0.4449009 A2 = 0.3 +RDSW = 306.5789827 PRWG = 0.5 PRWB = 0.5 +WR = 1 WINT = 0 LINT = 2.761033E-8 +XL = 0 XW = -1E-8 DWG = -2.433889E-8 +DWB = -9.34648E-11 VOFF = -0.0867009 NFACTOR = 2 +CIT = 0 CDSC = 2.4E-4 CDSCD = 0 +CDSCB = 0 ETA0 = 1.018318E-3 ETAB = -3.206319E-4 +DSUB = 1.094521E-3 PCLM = 1.3281073 PDIBLC1 = 2.394169E-3 +PDIBLC2 = -3.255915E-6 PDIBLCB = -1E-3 DROUT = 0 +PSCBE1 = 4.881933E10 PSCBE2 = 5E-10 PVAG = 2.0932623 +DELTA = 0.01 RSH = 7.5 MOBMOD = 1 +PRT = 0 UTE = -1.5 KT1 = -0.11 +KT1L = 0 KT2 = 0.022 UA1 = 4.31E-9 +UB1 = -7.61E-18 UC1 = -5.6E-11 AT = 3.3E4 +WL = 0 WLN = 1 WW = 0 +WWN = 1 WWL = 0 LL = 0 +LLN = 1 LW = 0 LWN = 1 +LWL = 0 CAPMOD = 2 XPART = 0.5 +CGDO = 6.52E-10 CGSO = 6.52E-10 CGBO = 1E-12 +CJ = 1.157423E-3 PB = 0.8444261 MJ = 0.4063933 +CJSW = 1.902456E-10 PBSW = 0.8 MJSW = 0.3550788 +CJSWG = 4.22E-10 PBSWG = 0.8 MJSWG = 0.3550788 +CF = 0 PVTH0 = 1.4398E-3 PRDSW = 0.5073407 +PK2 = 2.190431E-3 WKETA = 0.0442978 LKETA = -2.936093E-3 +PU0 = -0.9769623 PUA = -4.34529E-11 PUB = 1E-21 +PVSAT = -50 PETA0 = 1.002762E-4 PKETA = -6.740436E-3 ) *