The ARPA-E project selections are for strategies for wide-bandgap, inexpensive transistors for controlling high efficiency systems (Switches) (SBIR/STTR).
The project “Current Aperture Vertical Electron Transistor Device Architectures for Efficient Power Switching” will receive $3,172,205 to develop new vertical gallium nitride (GaN) semiconductor technologies.
The University of California, Santa Barbara Mishra group will develop these technologies to enhance the performance and reduce the cost of high-power electronics. The team’s current aperture vertical electron transistor devices could reduce power losses and reach beyond the performance of lateral GaN devices when switching and converting power. If successful, UCSB’s devices will enable high-power conversion at low cost in motor drives, electric vehicles, and power grid applications.