New rapid synthesis of bilayer graphene invention opens pathways for digital electronics and transparent conductor applications.
ECE Professor Kaustav Banerjee’s Nanoelectronics Research Lab have recently demonstrated an ultra-fast and deterministic growth technique for high-quality and wafer-scale bilayer graphene films with controlled stacking order. This invention can open up new pathways for digital electronics and transparent conductor applications.
Monolayer graphene is not well suited for digital electronics due to its zero band gap. However, a considerable band gap (up to 0.25 eV) can be opened up in bilayer graphene when the two layers are oriented in a specific manner (AB stacking) with respect to each other. Nevertheless, controlled synthesis of such bilayer graphene films over large area and with high uniformity have been challenging. Professor Banerjee’s invention has overcome this major technological barrier.
The invention also includes the first demonstration of bilayer graphene double-gate field-effect transistors, showing record ON/OFF transistor switching ratio and carrier mobility that could drive future ultra-low power and low-cost electronics.
The work has received worldwide media coverage in scientific forums such as Phys.org, Graphene Times, Science Daily, ScienceNewsline, AZoNano, as well as in more general electronic news outlets such as eWallstreeter and Daily News.