Citations to my Publications (Google Scholar link):

604         Total citations
14           Hirsch h-index
18           i¹⁰-index

38           Refereed papers (17 1st - author, 21 nth - author)
36           Refereed conference presentations (8 1st - author, 27 nth - author)
9             Invited talks
1             Book chapter
13           Non-refereed publications
 

Refereed Journal Papers / Proceedings

[1]  A. Simsek, S. Arafin, S.-K. Kim, G. Morrison, L. Johansson, M. Mashanovitch, L. A. Coldren, and M. J. Rodwell, “Evolution of chip-scale heterodyne optical phase-locked loops towards watt-level power consumption" IEEE J. Lightw. Technol., vol. 36, no. 2, pp. 258-264, Jan. 2018.

[2] S. Arafin, and L. A. Coldren, “Advanced InP photonic integrated circuits for communication and sensing”, (invited review), IEEE J. Sel. Top. Quantum Electron., vol. 24, no. 1, pp. 1-12, Sept. 2017.

[3] S. Arafin, A. Simsek, M. Lu, M. J. Rodwell, and L. A. Coldren, “Heterodyne locking of a fully integrated optical phase-locked loop with on-chip modulators”, Opt. Lett., vol. 42, no. 18, pp.1-4,  Aug. 2017. [Editor's pick]

[4] B. Guan, P. Li, S. Arafin, Y. Alaskar, K. L. Wang, “Investigation of single-mode vertical-cavity surface-emitting lasers with graphene-bubble dielectric DBR,” Photonics and Nanostructures- Fundamentals and Applications, vol. 28, pp.56-60, Feb. 2018.

[5] S. Arafin, A. Simsek, S.-K. Kim, W. Liang, D. Eliyahu, A. Matsko, L. Johansson, L. Maleki, M. J. Rodwell, and L. A. Coldren, “Power-efficient Kerr frequency comb based tunable optical source,” IEEE Photon. J., vol. 9, no. 3, pp. 1-14,  Mar. 2017.

[6] S. Arafin, G. Morrison, M. Mashanovitch, L. A. Johansson, and L. A. Coldren, “Compact low-power consumption single-mode coupled-cavity lasers,”  IEEE J. Sel. Top. Quantum Electron., vol. 23, no. 6, pp. 1-9, May. 2017.

[7] T. Eales, I. Marko, B. A. Ikyo, A. R. Adams, S. Arafin, S. Sprengel, M.-C. Amann and S. J. Sweeney, "Wavelength dependence of efficiency limiting mechanisms in Type-I GaInAsSb/GaSb lasers emitting in the mid-infrared," IEEE J. Sel. Top. Quantum Electron., vol. 23, no. 6, pp.1-9, Mar. 2017

[8] S. Arafin, A. Simsek, S.-K. Kim, S. Dwivedi, W. Liang, D. Eliyahu, J. Klamkin, A. Matsko, L. Johansson, L. Maleki, M. J. Rodwell, and L. A. Coldren, “Towards chip-scale optical frequency synthesis based on optical heterodyne phase-locked loop,” Opt. Express, vol. 25, no. 2, pp. 681-695,  Dec. 2016. [Highlighted in Nat. Photon]

[9] A. B. Ikyo, I. P. Marko, K. Hild, A. R. Adams, S. Arafin, M. -C. Amann and S. J. Sweeney, “Temperature-stable mid-infrared GaInAsSb/GaSb vertical-cavity surface-emitting lasers (VCSELs),” Sci. Rep., vol. 6, pp. 19595(1-6), Jan. 2016.

[10] W. Li, A. Mecozzi, M. Lu, M. Vasilyev, S. Arafin, D. Dadic, L. Johansson and L. A. Coldren, “First monolithically integrated single-chip dual-pumped phase-sensitive amplifier at 1560 nm based on a highly saturated semiconductor optical amplifier,” IEEE J. Quantum Electron.,vol. 52, no. 1, pp. 1-12, Jan. 2016.

[11] Y. Alaskar*, S. Arafin*, Q. Lin, J. McKay, D. Wickramaratne, M. S. Goorsky, R. K. Lake, M. A. Zurbuchen, and K. L. Wang, “Theoretical and experimental study of highly textured GaAs on silicon using a graphene buffer layer”, in Proc. 18th Intl. Conf. Molecular Beam Epitaxy 2014, J. Cryst. Growth, vol. 425, no. 1, pp. 268–273, Sept. 2015. *equal contribution

[12] Y. Alaskar*, S. Arafin*, D. Wickramaratne, M. A. Zurbuchen, L. He, R. K. Lake, and K. L. Wang, “Towards van der Waals epitaxial growth of GaAs on Si using a graphene buffer layer,” Adv. Funct. Mater. vol. 24, no. 42, pp. 6629-6638, Aug. 2014. *equal contribution        

[13] Q. Wang , B. Guan , K. Liu, X. Liu, X. Jiang, Y. Ma, S. Arafin, G. Shen, “Temperature dependent polarization switch of 850-nm VCSELs with different apertures,” Opt. Laser Technol. vol. 63, pp. 19-23, Mar. 2014.

[14] L.-T. Chang, C.-Y. Wang, J. Tang, T. Nie, W. Jiang, C.-P. Chu, S. Arafin, L. He, M. Afsal, L.­J. Chen and K. L. Wang, “Electric-field control of ferromagnetism in Mn-doped ZnO nanowires,” Nano Lett. vol. 14, no. 4, pp. 1823–1829, Feb. 2014.

[15] C.-P. Chu, S. Arafin, G. Huang, T. Nie, K. L. Wang, Y. Wang, J. Zou,  S. M. Qasim, and M. S. BenSaleh, “Selectively grown GaAs nanodisks on Si(100) by molecular beam epitaxy,” in Proc. 30th North American Conference on Molecular Beam Epitaxy (NAMBE)  J. Vac. Sci. Technol. B, vol. 32, no. 2, Feb. 2014.

[16] G. M. T. Chai, T. J. C. Hose, N. E. Fox, K. Hild, A. B.Ikyo, I. P. Marko, S. J. Sweeney, A. Bachmann, S. Arafin, M.-C. Amann. “Characterization of 2.3 µm GaInAsSb-based vertical-cavity surface-emitting laser structures using photomodulated reflectance,” J. Appl. Phys., vol.115, no.1, pp. 013102 (1-7), Jan. 2014.

[17] C.-P. Chu, S. Arafin, T.  Nie, K. Yao, X. Kou, L. He, C.-Y. Wang, S.-Y. Chen, L.-J. Chen, S. M. Qasim, M. S. BenSaleh and K. L. Wang, “Nanoscale growth of GaAs on patterned Si(111) substrates by molecular beam epitaxy,” Cryst. Growth Des., vol. 14, no. 2, pp. 593-598, Dec. 2013.

[18] A. Kumar, S. Arafin, M.-C. Amann and R. Singh, “Temperature dependence of electrical characteristics of Pt/GaN Schottky diode fabricated by UHV e-beam evaporation,” Nanoscale Res. Lett., vol. 8, no.1, pp. 481-488, Nov. 2013.

[19] S. Arafin, X. Liu, and Z. Mi, “Review of recent progress on nitride nanowire lasers,” (invited), SPIE J. Nanophotonics, vol.7, no.1, pp. 074599(1-27), Sept. 2013. [Top downloaded article]

[20] M. H. T. Dastjerdi, M. Djavid, S. Arafin, X. Liu, P. Bianucci, P. J. Poole and Z. Mi, “Optically pumped rolled-up InAs/InGaAsP quantum dash lasers at room-temperature,” Semicond. Sci. Technol., vol. 28, no. 9, pp. 094007(1-5), Aug. 2013.  [selected as front-cover featured article]

[21] S. Arafin, A. Bachmann, K. Vizbaras, A. Hangauer, J. Gustavsson, J. Bengtsson, A. Larsson, and M.­C. Amann, “Comprehensive analysis of electrically-pumped GaSb-based VCSELs,” Opt. Express, vol. 19, no. 18, pp. 17267-17282, Aug. 2011.

[22] K. Vizbaras, M. Toerpe, S. Arafin, and M.-C. Amann, “Ultra-low resisitve GaSb/InAs tunnel junctions,” Semicond. Sci. Technol., vol. 26, no. 7, pp. 07502(1-4), Apr. 2011.

[23] S. Arafin, A. Bachmann, and M.-C. Amann, “Transverse-mode characteristics of GaSb-based VCSEL with buried tunnel junctions,” IEEE J. Sel. Top. Quantum Electron., vol. 17, no. 6, pp. 1576­1583, Mar. 2011.

[24] K. Vizbaras, S. Arafin, and M.-C. Amann, “Single mode and tunable GaSb-based VCSELs for wavelengths above 2 µm,” in Vertical-Cavity Surface-Emitting Lasers XV, J. K. Guenter, and C. Lei, (Eds.), Proc. SPIE 7952, pp.79520D(1-7), Feb. 2011.

[25] M. Ortsiefer, C. Neumeyr, J. Rosskopf, S. Arafin, G. Boehm, A. Hangauer, J. Chen, R. Strzoda, and M.-C. Amann, “GaSb and InP-based VCSELs at 2.3 µm emission wavelength for tunable diode laser spectroscopy of carbon monoxide,” (invited), in Quantum Sensing and Nanophotonic Devices VIII, M.Razeghi, R.Sudharsanan, and G. J. Brown, (Eds.) Proc. SPIE 7945, pp. 794509(1-7), Jan. 2011.

[26] K. Vizbaras, A. Bachmann, S. Arafin, K. Saller, S. Sprengel, G. Boehm, R. Meyer, and M.­C. Amann, “MBE growth of low threshold GaSb-based lasers with emission wavelengths in the range of 2.5 to 2.7 µm,” J. Cryst. Growth, vol. 323, no. 1, pp. 446-449, Dec. 2010.

[27] S. Arafin, A. Bachmann, K. Vizbaras, J. Gustavsson, A. Larsson, and M.-C. Amann, “Large-area single-mode GaSb-based VCSELs using an inverted surface relief,” in Proc. 23rd Annual Meeting of the IEEE Photonics Society 2010, paper MI3, pp. 61-62, Denver, CO, USA, Nov. 2010.

[28] S. Arafin, A. Bachmann, K. Vizbaras, and M.-C. Amann, “Large-aperture single-mode GaSb-based BTJ-VCSELs at 2.62 µm,” in Proc. 22nd IEEE International Semiconductor Laser Conference, ISLC 2009, paper TuB4, pp.47-48, Kyoto, Japan, Sept. 2010.

[29] A. Härkönen, A. Bachmann, S. Arafin, K. Haring, J. Viheriälä, M. D. Guina, and M.-C. Amann, “2.34 µm electrically-pumped VECSEL with buried tunnel junction,” in Semiconductor Lasers and Laser Dynamics IV, K. P. Panayotov, M. Sciamanna, A. A. Valle, and R. Michalzik, (Eds.), Proc. SPIE 7720, pp. 772015(1-7), Apr. 2010.

[30] A. Bachmann, S. Arafin, and K. Kashani-Shirazi, “Single-mode electrically-pumped GaSb-based VCSELs emitting continuous-wave at 2.4 and 2.6 µm,” (invited), New J. Phys., vol. 11, no. 12, pp. 125014-(1-17), Dec. 2009.

[31] S. Arafin, A. Bachmann, K. Kashani-Shirazi, S. Priyabadini, and M.-C. Amann, “Low-resistive sulphur-treated ohmic contacts to n-type InAsSb,” IET Optoelectron., vol. 3, no. 6, pp. 259-263, Dec. 2009.

[32] S. Arafin, A. Bachmann, K. Kashani-Shirazi, and M.-C. Amann, “Continuous-wave electrically-pumped GaSb-based VCSELs at ~2.6 µm operating up to 50°C," in Proc. 22nd Annual Meeting of the IEEE Photonics Society 2009, paper ThBB2, pp. 837-838, Belek-Antalya, Turkey, Oct. 2009.

[33] S. Arafin, A. Bachmann, K. Kashani-Shirazi, and M.-C. Amann, “Electrically-pumped continuous-wave vertical-cavity surface-emitting lasers at 2.6 µm,” Appl. Phys. Lett., vol. 95, no. 13, pp. 131120(1-3), Oct. 2009.

[34] S. Arafin, A. Bachmann, K. Kashani-Shirazi, and M.-C. Amann, “Continuous-wave single-mode electrically-pumped GaSb-based VCSELs at 2.5 µm,” in Proc.8th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2009, paper WG4-2, pp. 1-2, Shanghai, China, Sept. 2009.

[35] A. Bachmann, S. Arafin, K. Kashani-Shirazi, and M.-C. Amann, “Long wavelength electrically-pumped GaSb-based buried tunnel junction VCSELs,” in Proc. 14th International Conference on Narrow Gap Semiconductors and Systems NGSS 2009, published in Physics Procedia, vol. 3, no. 2, pp. 1155­1159, Sendai, Japan, July 2009.

[36] K. Kashani-Shirazi, K. Vizbaras, A. Bachmann, S. Arafin, and M.-C. Amann, “Low-threshold strained quantum-well GaSb-based lasers emitting in the 2.5- to 2.7 µm wavelength range,” IEEE Photon. Technol. Lett., vol. 21, no.16, pp. 1106-1108, June 2009.

[37] A. Bachmann, K. Kashani-Shirazi, S. Arafin, and M.-C. Amann, “GaSb-based VCSEL with buried tunnel junction for emission around 2.3 µm,” IEEE J.  Sel. Top. Quantum Electron. vol. 15, no. 3, pp. 933-940, June 2009.

[38] K. Kashani-Shirazi, A. Bachmann, S. Arafin, K. Vizbaras, and M.-C. Amann, “Ultra-low threshold GaSb-based laser diodes at 2.65 µm,” in Proc. Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, CLEO /IQEC 2009, paper CTuGG5, pp. 1-2, Baltimore, USA, May 2009.

Refereed Conference Talks 

[1] S. Arafin, A. P. McFadden, M. Pendharkar, C. J. Palmstrøm and L. A. Coldren, “Recent progress on GaSb-based photonic integrated circuits,” 14th International Conference on Mid-Infrared Optoelectronics, MIOMD- 2018, Flagstaff, AZ, USA, Oct. 2018.

[2] S. Arafin, A. Simsek, M. Lu, M. J. Rodwell, L. A. Coldren, “Offset locking of a fully integrated optical phase-locked loop using on-chip modulators,” OSA Advanced Photonics IPR 2017, New Orleans, LA, USA, July 2017.

[3] L. Maleki, W. Liang, V. Ilchenko, A. Savchenkov, D. Eliyahu, A. Matsko, S. Arafin, A. Simsek, S.-K. Kim, G. Morrison, M. Mashanovitch, L. Johansson, M. J. Rodwell and L. A. Coldren, “Optical synthesis using Kerr frequency combs”, IEEE IFCS 2017, Besançon, France, July 2017.

[4] T. Eales, I. P. Marko, B. A. Ikyo, A. R. Adams, I. Vurgaftman, S. Arafin, S. Sprengel, M.-C. Amann, J. R. Meyer and S. J. Sweeney,, "Auger recombination in type I GalnAsSb/GaSb lasers and its variation with wavelength in the 2–3 μm range," CLEO/Europe-EQEC 2017, Munich, Germany, June  2017.

[5] S. Arafin, A. Simsek, S.-K. Kim, S. Dwivedi, W. Liang, D. Eliyahu, J. Klamkin, A. Matsko, L. Johansson, L. Maleki, M. J. Rodwell, and L. A. Coldren, “Optical frequency synthesis by offset-locking to a microresonator comb,” CLEO 2017, San Jose, CA, USA, May 2017.

[6] S. Arafin, G. Morrison, M. Mashanovitch, L. A. Johansson, and L. A. Coldren, “Coupled-cavity lasers for a low-power integrated coherent optical receiver,”  CLEO 2017, San Jose, CA, USA, May 2017.

[7] A. Simsek, S. Arafin, S.-K. Kim, G. Morrison, L. A. Johansson, M. Mashanovitch, L. A. Coldren, and M. J. Rodwell, “A chip-scale heterodyne optical phase-locked loop with low-power consumption,” Optical Fiber Communication Conference 2017, Los Angeles, CA, USA, Mar. 2017.

[8] T. Eales,  I.  P. Marko, B. A. Ikyo, A. R. Adams, S. Arafin, S. Sprengel, M.-C. Amann and S. J. Sweeney, "Wavelength dependence of efficiency limiting mechanisms in type-I GaInAsSb/GaSb lasers emitting in the mid-infrared," 2016 International Semiconductor Laser Conference (ISLC), Kobe, Japan, paper TuB8, pp.1-2, Sept. 2016.

[9] T. Eales, I. Marko, B. Ikyo, A. R. Adams, S. Arafin, S. Sprengel, and M.-C. Amann, S. J. Sweeney, “Recombination processes in type-I GaInAsSb lasers,” 13^th International Conference on Mid-Infrared Optoelectronics: Materials and Devices, Beijing, China, Sept. 2016.

[10] M. Rodwell, A. Simsek, D. Dadic, S. Arafin, H. Park and L. A. Coldren, “IC design for optical frequency synthesis,” (invited), 2016 IEEE Photonics Conference, Waikoloa, Hawaii, USA, Oct. 2016.

[11] L. A. Coldren, M. Lu, J. Parker, L. Johansson, S. Arafin, D. Dadic, M. Rodwell, “Toward Hz-level Optical Frequency Synthesis Across the C-band,” (invited), Integrated Photonics Research, Silicon and Nanophotonics 2016, Vancouver, BC, Canada, July 2016.

[12] L. A. Coldren, W. Li, A. Mecozzi, M. Lu, S. Arafin, M. Vasilyev, D. Dadic, and L. Johansson, “Single-chip dual-pumped SOA-based phase-sensitive amplifier at 1550 nm,” Nonlinear-Optical Signal Processing (NOSP) within IEEE Summer Topicals Meeting 2015, Nassau, Bahamas, July 2015.

[13] W. Li, M. Lu, L. Johansson, M. Mashanovitch, D. Dadic, S. Arafin, and L. A. Coldren, “First demonstration of an integrated photonic phase-sensitive amplifier,” Conference on Lasers and Electro-Optics 2015, San Jose, CA, USA, May 2015.

[14] D. Wickramaratne, Y. Alaskar, S. Arafin, A. G. Norman, J. Zou, Z. Zhang K. L. Wang, and R. K. Lake, “Van der Waals materials as buffer layers for quasi-vdW epitaxy of GaAs on Si,” Lawrence Epitaxy Workshop 2015, Tempe, AZ, USA, Feb. 2015. Presentation file

[15] Y. Alaskar*, S. Arafin*, D. Wickramaratne, R. K. Lake, and K. L.Wang, “Quasi Van Der Waals Epitaxy of GaAs on Graphene/Si by molecular beam epitaxy,” 18th International Conference on Molecular Beam Epitaxy 2014, Flagstaff, AZ, USA, Sept. 2014, Poster.  *equal contribution

[16] G. M.T. Chai, T.J.C. Hosea, N.E. Fox, K. Hild, A. B. Ikyo, I. P. Marko, A. Bachmann, S. Arafin, M.-C. Amann, S. J. Sweeney, "Photoreflectance of a 2.3 µm GaInAsSb-based VCSEL structure for gas sensing applications," 2nd Annual International Conference on Optoelectronics, Photonics & Applied Physics (OPAP), Canning Walk, Singapore, Singapore, Feb. 2014.

[17] C.-P. Chu, S. Arafin, G. Huang, T. Nie, Y. Wang, J. Jou, S. M. Qasim, M. S. BenSaleh and K. L. Wang, “Selectively grown GaAs nanodisks on Si(100) by molecular beam epitaxy,” 30th North American Conference on Molecular Beam Epitaxy (NAMBE), Banff, AB, Canada, Oct. 2013.

[18] B. H. Le, S. Arafin, N. H. Tran, H. P. T. Nguyen and Z. Mi, “Current-voltage characteristics of single InGaN/GaN nanowire LEDs,” 10th International Conference on Nitride Semiconductors 2013, Washington, DC, USA, Aug. 2013, Poster.

[19] S. Sprengel, K. Vizbaras, C. Grasse, T. Gruendl, S. Arafin, A. Andrejew, G. Boehm, R. Meyer, M.-C. Amann, “Advanced concepts for long wavelength surface and edge emitting lasers in the mid-IR,” (invited), 40th International Symposium on Compound Semiconductors, Kobe, Japan, May 2013.

[20] A. B. Ikyo, I. P. Marko, K. Hild, A. R. Adams, S. Arafin,  M.-C.Amann, and S. J. Sweeney, “The effect of hole leakage and Auger recombination on the temperature sensitivity of GaInAsSb/GaSb mid-infrared lasers,” in CLEO/Europe-IQEC 2013,  Munich, Germany, May 2013.

[21] A. B. Ikyo, I. P. Marko, K. Hild, A. R. Adams, S. Arafin,  M.-C.Amann, and S. J. Sweeney, “Influence of band offset and Auger recombination on the temperature sensitivity of GaInAsSb/GaSb mid-infrared lasers,”  in SPIE Photonics West 2012,  Conf.on Novel In-Plane Semiconductor Lasers XII,  San Francisco, CA, USA, Feb. 2013.

[22] A. B. Ikyo, I. P. Marko, K. Hild, A. R. Adams, S. J. Sweeney, S. Arafin, and M.-C.Amann, “Temperature dependence of 2.3 µm and 2.6 µm GaInAsSb based BTJ-VCSELs and edge emitting lasers,”  in SPIE Photonics West 2012,  Conf.on Novel In-Plane Semiconductor Lasers XI,  San Francisco, CA, USA, Jan. 2012.

[23] M.-C. Amann, and S. Arafin, “GaSb-based wavelength-tunable single-mode VCSELs for the 2­3 µm wavelength range,” (invited), 10th International Conference on Mid-Infrared Optoelectronics, IC-MIOMD-X 2010, Shanghai, China, Sept. 2010.

[24] A. B. Ikyo, I. P. Marko, K. Hild, A. R. Adams, S. J. Sweeney, S. Arafin, and M.-C. Amann, “Gain-cavity tuning and non-radiative recombination in 2.6 µm GaInAsSb VCSEL,” UK Semiconductors 2011, Sheffield, UK, July 2011.

[25] A. B. Ikyo, I. P. Marko, A. R. Adams, S. J. Sweeney, S. Arafin, and M.-C.  Amann, “Wavelength dependence of the performance of GaInAsSb/GaSb mid-infrared lasers,” UK Semiconductors 2011, Sheffield, UK, July 2011, Poster.

[26] K. Vizbaras, A. Andrejew, A. Vizbaras, C. Grasse, S. Arafin, and M.-C. Amann, “Low-threshold 3 µm GaInAsSb/AlGaInAsSb quantum-well lasers operating in continuous wave up to 64°C,” Indium Phosphide and Related Materials, IPRM 2011, Berlin, Germany, May 2011.

[27] M. Ortsiefer, C. Neumeyr, J. Rosskopf, S. Arafin, G. Boehm, A. Hangauer, J. Chen, R. Strzoda, and M.-C. Amann, “GaSb and InP-based VCSELs at 2.3 µm emission wavelength for tunable diode laser spectroscopy of carbon monoxide,” (invited), in SPIE Photonics West 2011, Conf. on Quantum Cascade Lasers and Applications II, San Francisco,  CA, USA, Jan. 2011.

[28] M.-C. Amann, S. Arafin, and K. Vizbaras, “Single-mode and tunable GaSb-based VCSELs for wavelengths above 2 µm,” (invited), in SPIE Photonics West 2011, Conf. on VCSEL Sensors and Applications, San Francisco, CA, USA, Jan. 2011.

[29] S. Arafin, A. Bachmann, K. Vizbaras, J. Gustavsson, A. Larsson, and M.-C. Amann, “Large-area single-mode GaSb-based VCSELs using an inverted surface relief,” 23rd Annual Meeting of the IEEE Photonics Society 2010, Denver, CO, USA, Nov. 2010. (Best Student Paper Award, 2nd place).

[30] S. Arafin, A. Bachmann, K. Vizbaras, and M.-C.Amann, “Large-aperture single-mode GaSb-based BTJ-VCSELs at 2.62 µm,” 22nd IEEE International Semiconductor Laser Conference, ISLC 2010, Kyoto, Japan, Sept. 2010.

[31] K. Vizbaras, A. Bachmann, S. Arafin, K. Saller, S. Sprengel, G. Boehm, R. Meyer, and M.­C. Amann, “MBE growth of low threshold GaSb-based lasers with emission wavelengths in the range of 2.5 to 2.7 µm,” 16th International Conference on Molecular Beam Epitaxy, MBE 2010, Berlin, Germany, Aug. 2010.

[32] A. Härkönen, A. Bachmann, S. Arafin, K. Haring, J. Viheriälä, M. D. Guina, and M.-C. Amann, “2.34 µm electrically-pumped VECSEL with buried tunnel junction,” in SPIE Photonics Europe, Conf. on Nanolasers and VECSELs, Brussels, Belgium, Apr. 2010.

[33] S. Arafin, A. Bachmann, K. Kashani-Shirazi, and M.-C. Amann, “Continuous-wave electrically-pumped GaSb-based VCSELs at 2.6 µm operating up to 50°C,” 22nd Annual Meeting of the IEEE Photonics Society 2009, Belek-Antalya, Turkey, Oct. 2009.

[34] S. Arafin, A. Bachmann, K. Kashani-Shirazi, and M.-C. Amann, “Continuous-wave single-mode electrically-pumped GaSb-based VCSELs at 2.5 µm,” 8th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2009, Shanghai, China, Sept. 2009.

[35] A. Bachmann, S. Arafin, K. Kashani-Shirazi, and M.-C. Amann, “Long wavelength electrically-pumped GaSb-based buried tunnel junction VCSELs,” 14th International Conference on Narrow Gap Semiconductors and Systems, NGSS 2009, Sendai, Japan, July 2009.

[36] K. Kashani-Shirazi, A. Bachmann, S. Arafin, K. Vizbaras, S. Ziegler, and M.-C. Amann, “Optimized MBE growth technique for GaSb-based edge emitters at 2.7 µm,” Euro MBE 2009, Zacopane, Poland, Mar. 2009.

Invited Talks

[1] S. Arafin, “The challenges of mid-IR LiDAR/remote sensing for the photonic chip,” OSA Integrated Photonics in the Mid-IR Incubator, Washington DC, USA, May 2018.

[2] S. Arafin, “Semiconductor materials and photonic devices - from visible to mid­infrared,” Dept. of Electrical and Computer Engineering, The Ohio State University, Columbus, OH, USA, Mar. 2018.

[3] S. Arafin, “Chip-scale optical frequency synthesis based on optical phase-locked loop,” University of Virginia, Charlottesville, VA, USA, Dec. 2017. [link]

[4] S. Arafin, A. Simsek, S.-K. Kim, W. Liang, D. Eliyahu, A. Matsko, L. Johansson, L. Maleki, M. J. Rodwell, and L. A. Coldren, “Optical frequency synthesis by offset-locking the tunable local-oscillator of a low-power integrated receiver to a microresonator comb,” IEEE IPC 2017, Lake Buena Vista, FL, USA, Oct. 2017.

[5] S. Arafin, “Semiconductor materials and photonic devices - from visible to mid­infrared,” Dept. of Electrical and Computer Engineering, University of Texas Dallas, Dallas, TX, USA, Apr. 2017.

[6] S. Arafin, “Recent progress of Quasi van der Waals epitaxial growth of GaAs on silicon using graphene,” Global Nanotechnology Congress and Expo, Dubai, UAE, Apr. 2016.

[7] S. Arafin, “Heteroepitaxy of GaAs on silicon: MBE growth and material characterization,” Department of Materials, UC Santa Barbara, USA, Jan. 2015.

[8] S. Arafin, “Electrically-pumped GaSb-based vertical-cavity surface-emitting lasers,” Department of Physics, Technische Universität Kaiserslautern, Kaiserslautern, Germany, Oct. 2011.

[9] S. Arafin, M. Müller, and M.-C. Amann, “InP-based high-speed VCSELs for optical interconnects,” in 22nd IEEE International Semiconductor Laser Conference, ISLC 2010, Workshop on Progress in light source for optical interconnection, Kyoto, Japan, Sept. 2010.

Book Chapter

Y. Alaskar, S. Arafin, and K. L. Wang, “Heteroepitaxial growth of III-V semiconductors on 2D materials”, in "Two-dimensional Materials - Synthesis, Characterization and Potential Applications", P. K. Nayak (Ed.), chapter 3, pp. 43-62, ISBN 978-953-51-2555-6, InTech, Rijeka, Croatia, Aug. 2016.

Non-Refereed Publications

[1]  A. P. McFadden, S. Arafin, M. Pendharkar, L. A. Coldren and C. J. Palmstrøm,  "MBE growth of quaternary AlGaAsSb/InGaAsSb heterostructures for tunable lasers with 2.2-2.6 µm emission wavelength", Poster, Light Science Workshop 2018, Santa Barbara, CA, USA

[2] T. Eales, I. P. Marko, B. A. Ikyo, A. R. Adams, S. J. Sweeney, S. Arafin, S. Sprengel, M. C. Amann, “Physical properties of type-I GaInAsSb/GaSb lasers emitting in the mid-infrared range of 2.3-2.9 µm”, 30^th Semiconductor Integrated Optoelectronics Conference, SIOE 2016, Cardiff, UK, Apr. 2016.

[3] H. P. T. Nguyen, S. Arafin, J. Piao and Tran Viet Cuong, “Nanostructured Optoelectronics: Materials and Devices”, J. Nanomaterials, vol. 2016, no. 2051908, pp. 1­2, July 2016. Editorial

[4] M. Lu, W. Guo, W. Li, A. Barve, L. Johansson, H.-C. Park, S. Arafin, D. Dadic, M. Rodwell, L. Coldren, “Photonic integrated circuits and VCSELs for communication and sensing”, University of California Santa Barbara Year of Light Symposium, Oct. 2015. Poster

[5] A. B. Ikyo, I .P. Marko, K. Hild, A. R. Adams, S. Arafin, M.-C. Amann, and S. J. Sweeney, “Temperature sensitivity and wavelength dependence of the recombination processes of GaInAsSb/GaSb mid-infrared lasers,” Semiconductor Integrated Optoelectronics Conference, SIOE 2015, Cardiff, UK, Apr. 2015.

[6]   S. Arafin, C.-P. Chu, Y. Alaskar and K. L. Wang, “Recent progress of heteroepitaxy for high-quality GaAs on silicon,” World Congress and Expo on Nanotechnology and Materials Science, Dubai, UAE, pp. 206, Apr. 2015.

[7] S. Arafin, “Graphene gets GaAs onto Silicon,” Feature article, Compound Semiconductor, pp. 42-46, May. 2015.

[8] S. Arafin, K. Klein, K. Vizbaras, and M.-C. Amann, “a-Ge and a-Si as dielectric mirror materials for long wavelength optoelectronics devices: a comparative study,” 25th Semiconductor Integrated Optoelectronics Conference, SIOE 2011, Cardiff, UK, Apr. 2011.

[9] S. Arafin, and M.-C. Amann, “Antimony-based tunable diode lasers for trace-gas sensing,” Fire & Safety Group Magazine, FS-World Newsletter, Aug. 2010.

[10] M.-C. Amann, A. Bachmann, S. Arafin, and K.Vizbaras, “Recent progress on GaSb-based single-mode VCSELs,” VCSEL Day 2010, Torino, Italy, May 2010.

[11] K. Vizbaras, A. Bachmann, S. Arafin, and M.-C. Amann, “Recent progress on electrically pumped single-mode GaSb-based VCSELs emitting around 2.3 µm and 2.6 µm,” International workshop on opportunities and challenges in mid-infrared laser-based gas sensing, MIRSENS 2010, Wroclaw, Poland, May 2010.

[12] S. Priyabadini, S. Arafin, A. Bachmann, K. Kashani-Shirazi, and M.-C. Amann, “Low-resistive thermally-stable metal-semiconductor contacts on n-GaSb uing n-InAsSb contact layer,” International Conference on Frontiers of Physics, IFCP 2009, Kathmandu, Nepal, June 2009.

[13] S. Arafin, A. Bachmann, K. Kashani-Shirazi, S. Priyabadini, and M.-C. Amann, “Low-resistive ohmic contacts to n-InAs_0.91Sb_0.09 for GaSb-based VCSELs in the mid-infrared range,” 23rd Semiconductor Integrated Optoelectronics Conference, SIOE 2009, Cardiff, UK, Apr. 2009.

Press Releases 

2014: Adv. Funct. Mater. paper on Van der Waals epitaxial growth of GaAs on graphene/silicon received a very extensive media coverage. The results were highlighted by more than 5 international online magazine/newsletters, e.g. Compound Semiconductor, Semiconductor Today, UCLA Electrical Engineering etc.

2017: Opt. Express paper on “Towards chip-scale optical frequency synthesis based on optical heterodyne phase-locked loop” was highlighted in Compound Semiconductor. Nat. Photon and ECE UCSB

 

Publications

Authored and coauthored more than 90 papers in leading technical journals and international conferences.