"Nanotube Transistors and Oxide Memristors"

Julien Borghetti, Hewlett-Packard Laboratories, Palo Alto, CA USA

March 4th (Friday), 5:30pm
Harold Frank Hall (HFH), Rm 4164

We will discuss the device physics and possible applications of two nano-electronic memories: (i) a nanotube transistor ‘optically gated’ with a photo-excited polymer [1], and (ii) oxide-based metal-insulator-metal memristors. We first describe the nanotube transistor operation as a synaptic weight logic element, then move to memristors as used in proof-of-principle demonstrations of reconfigurable logic within a high density crossbar array [2], and an unusual intrinsic logic-in-memory or stateful logic circuit [3] where the memory device also performs computation. Finally, we discuss the metal/oxide memristor device physics via theoretical modeling and experimental electrical characterization including the temperature dependence of the conductance [4], its fluctuations and instabilities.

[1] J. Borghetti et al. Adv. Mater. 18, 2535 (2006)
[2] J. Borghetti et al. PNAS 106, 1699 (2009)
[3] J. Borghetti et al. Nature 464, 873 (2010)
[4] J. Borghetti et al. J. App. Phys 106, 125404 (2009)

About Julien Borghetti:

Julien Borghetti graduated from the Ecole Normale Superieure de Cachan in France, completed an aggregation in applied physics, and a Ph.D. in physics in Paris XI. He was postdoctoral fellow and is now a visiting scholar in the Hewlett Laboratories in Palo Alto. His research interests are focused on the electronic properties of materials. His achievements includes the pioneer demonstrations of an optoelectronic device combining nanotube and polymeric transistors, memristor based stateful logic, self-reprogrammable crossbar architecture, and electric transport and noise in memristive device. His recent work is focused on the electronic phase transition in graphite.

Hosted by: Professor Dmitri Strukov