"Networked-Nanographite Wire Grown on SiO2 Dielectric without Catalysts using Metal-Photoemission-assisted Plasma-enhanced CVD"

Motonobu Sato, Fujitsu Laboratories Ltd

June 10th (Thursday), 11:30am
ESB 2003

We have developed networked-nanographite (NNG) wires as the first step for multilayer graphene interconnects. Photoemission-assisted Plasma-enhanced CVD has been proposed as a growth method on dielectrics without catalysts. The activation energy of carrier conduction for NNG wire was almost the same
as that of multilayer graphene exfoliated from highly oriented pyrolytic graphite (HOPG). This means that NNG consists of domains of multilayer graphene. Although we need to improve growth conditions, NNG is one of the candidates for future interconnect materials.

About Motonobu Sato:

Motonobu Sato received the M.S. degree in energy engineering from Nagoya University, Nagoya, Japan, in 1998. Since 1998 he has worked at Fujitsu Group, (Fujitsu VLSI Ltd., Fujitsu Ltd., Fujitsu Microelectronics Ltd., and Fujitsu Laboratories Ltd.), where he has been engaged in the research and development of LSI (Reliability evaluation in quality assurance division, Copper plating in process division, and carbon nanotube/grahpene integration in nanoelectronics research center). Since June 1, 2010, he has been working at the National Institute of Advanced Industrial Science and Technology (AIST). He is currently working on the development of carbon nanotube/graphene interconnects for future LSI interconnects.

Hosted by: Kaustav Banerjee