"GaN, Graphene and Tunnel FETs"

Huili (Grace) Xing, Professor, Electrical Engineering Department, University of Notre Dame

April 16th (Monday), 4:00pm
Elings Hall (CNSI), Room 1601

In this talk, Professor Xing will review the recent development of GaN electronics [1], graphene THz modulators [2] and tunnel field effect transistors (FETs) [3], three different topics, in our group.

One of our current research topics on GaN electronics is to develop THz devices. We have proposed an NDR-gated plasmonic channel device to realize THz emission, detection and amplification.

Graphene, an atomically thin 2D crystal with zero bandgap, has been touted for many intriguing applications, particularly for transparent touch screens and wearable electronics. Its optoelectronic properties are equally noteworthy. We successfully constructed THz modulators using graphene for the first time, another new avenue for graphene research.

Tunnel FETs are promising replacements of Si-MOSFETs beyond 2020 due to their promise to achieve Ion/Ioff > 103 with Ion > 100 uA/um at low supply voltages (up to 0.5 V). To date we have demonstrated Ion/Ioff ~ 106, Ion ~ 50 uA/um. Challenges ahead include electrostatic control, defect-assisted tunneling and interface state density and parasitics.

About Huili (Grace) Xing:

Huili (Grace) Xing is currently the John Cardinal O’Hara CSC Associate Professor of Electrical Engineering at the University of Notre Dame. She obtained B.S. in physics from Peking University (1996), M.S. in Material Science from Lehigh University (1998) and Ph.D. in Electrical Engineering from University of California, Santa Barbara (2003), respectively. Her research focuses on development of III-V nitride and 2-D crystal semiconductor growth and (opto)electronic devices, especially the interplay between the material quality and device developments. More recent research interests include THz applications. She is a recipient of AFOSR Young Investigator Award and NSF CAREER Award.

Hosted by: Professor Umesh Mishra