PhD Defense: "Highly-strained P-type Modulation Doped Active Regions for High-speed VCSELs"

Yan Zheng

June 25th (Monday), 12:00pm
Engineering Science Building (ESB), Rm 1001

Countless surveys have affirmed something many of us have experienced for quite some time, that we are spending more and more of our time ‘plugged in’. Whether it is time doing online transactions, gaming, social networking or even doing a simple Google search, they all require the movement of data from one point to another and at increasingly higher speeds through sprawling data centers. The traditional network of copper wires is currently at odds with growth trends because they must be shortened to achieve the necessary higher speeds while data centers are only getting larger. A far more promising solution is to transmit data through fiber optical cables using high-speed vertical cavity surface emitting lasers (VCSELs) which can operate at higher speeds, use less energy, and can be built at low-cost.

In this dissertation I will discuss the epitaxial growth and fabrication of highly-strained 1060 nm p-type modulation doping in InGaAs/GaAs multiple quantum well (MQW) active regions for efficient high-speed VCSELs. Their effect on high-speed modulation, damping and nonlinear gain compression will also be examined. In addition, I will also look at promoting single-mode operation by introducing mode-selective loss to the waveguide.

About Yan Zheng:

photo of yan zheng Yan Zheng (S’02) was born in Beijing, China in 1982. He received his B.S. in electrical and computer engineering from the University of California, San Diego in 2005 and a M.S. in electrical and computer engineering from the University of California, Santa Barbara in 2007. He is currently pursuing his Ph.D. at the University of California, Santa Barbara. His work is focused on the design, growth and fabrication of novel vertical-cavity surface-emitting lasers.

Hosted by: Professor Larry Coldren