"The Donald W. Whittier Chair Lecture: ECE Professor Umesh Mishra — “Gallium Nitride… living the next semiconductor revolution”"

Umesh Mishra, Professor, ECE, UCSB

December 5th (Thursday), 4:00pm
Engineering Science Building (ESB), Room 1001

For a new semiconductor to become viable, it must enable functions not possible using Silicon, now or …ever. One safe haven is the class of direct bandgap materials, which emit light; Silicon does not. It is also necessary for the semiconductor to have broad applications so that economies of scale, which is essential in semiconductor economics, can be applied. As an example the Gallium Arsenide (GaAs) industry was conceived in the opto-electronic applications of lasers, LEDs and detectors, but the substrate cost driven down in part by high volume wireless handset applications (most phones have a GsAs Heterojunction Bipolar Transistor as a power transmitter). Gallium Nitride (GaN) is a towering new semiconductor because of the sheer breadth of applications which it enables, in opto-electronics (blue LEDS, white LED based lighting…) and now electronics for RF and power conversion. In this talk, GaN will be celebrated for both its physical and career-building properties.

About Umesh Mishra:

photo of umesh mishra Umesh Mishra received his bachelor of technology (B.Tech.) degree from the Indian Institute of Technology, Kanpur, India in 1979. He earned his Master of Science degree from Lehigh University, Bethlehem, Pennsylvania, in 1980, followed by his PhD from Cornell University in Ithaca, New York, in 1984. Dr. Mishra has supervised over fifty PhD students who themselves have excelled in academia and industry. He has co-founded two companies, Nitres and Transphorm, with the former being the first Gallium Nitride-based start-up in the world. He was honored as Principal Staff Engineer at General Electric for contributing to the development of the receiver that received pictures of Neptune beamed by Voyager seen around the world. Other awards include the Hyland Award from Hughes Aircraft for developing low noise HEMTs for space-based amplifiers, along with the Young Scientist Award, the Quantum Device Award and the Welker Medal, all from the International Symposium of Compound Semiconductors (ISCS). A Fellow of the IEEE, Dr. Mishra received the IEEE David Sarnoff Award, is a Distinguished Alumnus of IIT Kanpur, and was elected to the National Academy of Engineering in 2007.

"Gallium Nitride... living the next semiconductor revolution" (video)

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