"Origins of Random Telegraph Noise, Bias Temperature Instability and Total Ionizing Dose -Defect-Oriented Degradations in Recent VLSIs"

Prof. Kazutoshi Kobayashi, Kyoto Institute of Technology

April 15th (Friday), 9:30am
Harold Frank Hall (HFH), Rm 4164 (ECE Conf. Rm.)

This paper explains Random Telegraph Noise (RTN) and Bias Temperature Instability (BTI) and Total Ionizing Dose (TID). They are correlated and caused from the same type of defects in gate and field oxides.

About Prof. Kazutoshi Kobayashi:

photo of Kazutoshi Kobayashi, Kazutoshi Kobayashi received his B.E., M.E. and Ph. D. in Electronic Engineering from Kyoto University, Japan in 1991, 1993, 1999, respectively. Starting as an Assistant Professor in 1993, he was promoted to associate professor in the Graduate School of Informatics, Kyoto University, and stayed in that position until 2009. For two years during this time, he acted as associate professor of VLSI Design and Education Center (VDEC) at the University of Tokyo. Since 2009, he has been a professor at Kyoto Institute of Technology.

Hosted by: Professor Tim Cheng