PhD Defense: "AFD-based Signal Line EM Reliability Modeling and Lifetime Prediction"

Zhong Guan

November 2nd (Wednesday), 2:00am
Harold Frank Hall (HFH), Rm 4164

According to the International Technology Roadmap for Semiconductors (ITRS),the decreasing chip feature size causes greatly increased current densities carried by interconnects. These large currents cause various reliability problems, among which electromigration (EM) is dominant. Over the years, EM has gradually emerged as a major reliability concern and the main critical source of failure mechanism affecting interconnects.

In this defense, I will first focus on SRAM bit-lines and demonstrate that they possibly can suffer EM failure. Then we propose an atomic flux divergence (AFD) based model along with simulation scheme to predict MTTF for lines with different current patterns. I will also demonstrate applicability of our models to improve EM reliability of signal lines and suggest a fast AFD computing algorithm. Accompanied by AFD model, I develop a general RC current response algorithm to further accelerate the EM evaluation process. Finally I expand the AFD model into multi-line system and optimize EM lifetime statistically.

About Zhong Guan:

Photo of Zhong Guan Zhong Guan received his B.S. degree in electronic science and technology (EST) from Huazhong University of Science and Technology, China in 2009 and M.S. degree in electrical Engineering from Columbia Univerisity in 2011. Now he is a PhD student with VLSI CAD group in department of computer engineering of University of California, Santa Barbara. His research involves signal line electromigration reliability and its related modeling and evaluation.

Hosted by: Professor M. Marek-Sadowska