PhD Defense: "Modeling Electronic Properties of Complex Oxides"

Karthik Krishnaswamy

November 18th (Friday), 11:00am
Harold Frank Hall (HFH), Rm 4164

Complex oxides are a class of materials that have emerged as potential candidates for novel electronic applications owing to their unique electronic properties. Observations of high-density two-dimensional electron gas (2DEG) at complex-oxide interfaces have attracted substantial attention. The 2DEG density at these interfaces is on the order of 1014 cm-2, which is two orders of magnitude higher when compared to silicon devices, and one order of magnitude higher in comparison with the nitrides system. However, to utilize the high-density 2DEG in devices, it is necessary to develop a fundamental understanding of the underlying physics in complex oxides and their heterostructures.

In this talk, using first-principles approaches, I will focus on addressing two important aspects of complex-oxide heterostructures: the phenomenon of surface charging in thin films; and the impact of LO-phonon and ionized impurity scattering mechanisms on carrier mobility. SrTiO3, BaSnO3, LaAlO3, and GdTiO3 will be discussed.

The results of this study have broad implications for understanding the behavior of complex oxides, and will help improve the design and performance of future electronic devices based on these materials.

About Karthik Krishnaswamy:

Photo of Krishnaswamy Karthik Krishnaswamy received his Bachelor of Engineering degree from the M. S. Ramaiah Institute of Technology (MSRIT) in Bangalore in 2011, and his Master of Science degree from the University of California, Santa Barbara in 2013. The primary focus of his research work is employing ab-initio techniques combined with device-level simulations to gain fundamental insights into the properties of novel electronic materials. His research interests are oriented towards creating useful electronic applications based on novel materials in the field of low-power electronics, solid-state lighting, and energy harvesting.

Hosted by: Professor Chris G. Van de Walle, Materials Department