"UCSB Nanotech TECH Talks | Andre Linden, Raith America & Brian Markman, UCSB"

Andre Linden, Raith America & Brian Markman, UCSB,

September 12th (Thursday), 12:00pm
Engineering Science Building (ESB), Room 1001

“Think Positive – Using ions to master demanding nanofabrication challenges”
Andre Linden, Raith America, Troy, NY

Abstract: FIB nanofabrication has proven unique strengths by numerous applications in R&D prototyping. It can help to achieve scientific results faster by in-situ optimization of patterning parameters and reducing the number of steps for the overall process. However, traditional FIB-SEM instruments are lacking patterning resolution, stability, large, corrected fields-of-view, and laser interferometer stages, which are essential components in EBL instrumentation and are mandatory for accurate FIB nanofabrication, which often require high resolution nanolithography with tight dimensional control over areas much larger than a field-of-view. Here, we present a new FIB-SEM nanofabrication instrument containing these essential components of EBL instrumentation, and review its FIBL applications in plasmonics, nanophotonics and other applications fields.

“Towards THz Transistors and Template Assisted Selective Epitaxy”
Brian Markman, University of California, Santa Barbara, CA

Abstract: As 5G (25-100GHz) begins to roll out globally, research must shift focus to communication systems beyond 5G (>100 GHz). For communications systems to work efficiently at 100-340 GHz, the transistors that form their foundation must be able to provide gain and low noise figure at those frequencies. Consequently, the transistors must operate beyond 1 THz.However, a highly scaled MOSFET’s RF performance is limited by end capacitance while modern HEMTs are limited by high gate leakage and comparatively less capacitive control of the channel. We present a new device that combines an intrinsic MOSFET with HEMT-like access regions operating to and a roadmap to >1 THz. Additionally, template fabrication for template assisted selective epitaxy (TASE) will be discussed as a route towards higher frequency bipolar transistors, integration of III-V on Si, and as a technique to develop laterally oriented heterojunction devices. Challenges in template fabrication, basic growth trends, and design considerations will be discussed.

About Andre Linden, Raith America & Brian Markman, UCSB:

Biography: Andre Linden graduated in the field of micro-system technology at University of Muenster in Germany and obtained his engineering degree in collaboration with Dornier on the topic of defect-free epitaxy of multilayered thin film systems. He worked on the development of piezoelectric micro-actuators for print heads at XaarJet in Stockholm, Sweden where he got involved in micro-fluidics. In 2000 he joined Raith GmbH as an application scientist where he invented several novel exposure strategies as well as developed a nanoengineering workstation for advanced nanofabrication processes. Since 2007 he is also engaged in FIB-based nanofabrication for various applications. Biography: Brian Markman graduated in Materials Science and Engineering with a focus on Electronic and Photonic Materials at Pennsylvania State University in 2015. There he worked on improvement of passive light collection for solar cells, organic micro-disk lasers, and chemical vapor deposition of 2D materials. In 2016 he joined the Rodwell High Frequency Electronics group at UCSB where he currently works on THz MOS-HEMTs and Tunnel FETs.

Hosted by: Professor Jonathan Klamkin