May 3 (Wed) @ 3:00pm: "Is the State-of-the-art 2D-FET Performance Sufficient for Bose-Einstein Condensation Applications?" Chandan Biswas, Research Prof., Ctr for Integrated Nanostructure Physics (CINAP), Sungkyunkwan U. (SKKU), Korea

Date and Time
Harold Frank Hall (HFH), Rm 4164 (ECE Conf. Rm.)


The scientific and technological bottlenecks in the large-scale practical applications of quantum computing are limited by the low-temperature superconductivity approach. An alternative approach is deemed necessary to achieve room-temperature quantum computing applications. Room-temperature Bose-Einstein condensation(BEC) and superfluidic boson transport phenomena serve as feasible alternatives to low-temperature quantum computing using superconductivity. Recently, numerous optical detection methods confirmed the superfluidic BEC phenomenon in solid-state materials at room temperature. The demonstration of BEC by electrical detection methods and its consequent electronic device applications are yet to be realized due to the low energy and momentum distribution of the energy-momentum-locked BEC signals. For example, the energy distributions of the BEC signal in two-dimensional (2D) van der Waals (vdWs) materials are few meV. The detections of such low-energy BEC signals are severely limited by comparably large contact resistance (RC) and poor gate-modulation efficiency (subthreshold swing, SS) of the vdWs material-based field-effect transistor (FET). Highly efficient FET devices with ultra-low RC and SS beyond the current state-of-the-art devices are necessary for the electronic applications of the BEC superfluidity. Here we demonstrate, a record-low Ohmic contact resistance RC of ~78 Ω-μm (close to the quantum limit) and a record-high on/off ratio of ~1011 in atomically-clean monolayer MoS2-FET on an h-BN substrate. Furthermore, we show ultra-low SS performance of 4.8 mV/dec in MoS2/MoS2-Gr/MoS2 heterostructure FET with an average SS of 13 mV/dec sustained over five decades of drain current. These device performances are superior to other 2D and 3D materials reported earlier. Such highly efficient device performance may provide an ideal electrical device platform for low-energy BEC signal measurements at room temperature. If this could provide an alternative solution for a qubit, quantum computing, and quantum information science applications at room temperature, is still an open question.


Dr. Chandan Biswas is a research professor (currently a senior researcher) at the Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science, Sungkyunkwan University (SKKU), Republic of Korea. Before joining SKKU, he worked as a researcher at the University of California Los Angeles (UCLA) and the University of Texas at El Paso, United States. Currently, he is the team leader of the Coulombic Boson Electronics group at CINAP, SKKU. His current research interest involves electronic transport devices including exciton-polariton electronics, room-temperature Bose-Einstein condensation, solid-state superfluidity, 2D quantum nanoelectronics, 2D opto-spintronics, 2D optoelectronics, 2D spin-logic devices towards the realization of room-temperature Qubit applications and room-temperature quantum computing.