Sep 22 (Fri) @ 10:00am: “Monolithic Integration of QD Lasers on 300 mm Silicon Photonic Wafers,” Kaiyin Feng, ECE PhD Defense

https://ucsb.zoom.us/j/87186837764?pwd=TDFWSmd1T0M5QksrZWpFalB2cjdUZz09

Abstract

Rapid development of the Si photonics industry and its applications in data communication and sensors calls for the making of on-chip light sources integrated on the Silicon-on-Insulator (SOI) platform for mass production. Monolithic integration of III-V lasers through heteroepitaxy has gained increasing attention as a key technology to realize efficient, low-cost, industrial-scale integration of light source on Si photonics wafers.

In this thesis, we demonstrate for the first time, quantum dot (QD) lasers directly grown in-pocket on 300 mm Si wafers and fabricated for electrically pumped lasing. O-band edge-emitting lasers are fabricated with robust performance of continuous wave lasing up to 60 °C, a maximum double-sided output power of 126.6 mW at 20 °C and high fabrication yield. 

We also demonstrate for the first time, on-chip etched-facet lasers directly butt-coupled to SiN waveguides made on a 300-mm scale foundry-processed Si photonics wafer. QD lasers are grown and fabricated in-pocket on SOI wafers, and the lasing performance is characterized by fiber-coupled output through edge couplers on the foundry processed Si photonics wafer.

Perspectives on scaling this QD laser integration process on a 300 mm scale in a Si photonics foundry process will also be discussed, including challenges and prospects on the implementation of fully monolithically integrated photonic systems.

Bio

Kaiyin Feng is currently a Ph.D Candidate in Dept. of Electrical and Computer Engineering at UCSB advised by Professor John Bowers. She received her Master of Engineering degree from the Dept. of Electrical Engineering and Information Systems in the University of Tokyo in 2017, and her Bachelor of Engineering degree from the Dept. of Electronic Engineering at the Chinese University of Hong Kong in 2015. Her research focus is semiconductor device engineering and novel process development for III-V/Si photonic integrated platforms with high-performance functionality, scalability, and reliability.

Hosted by: Professor John Bowers

Submitted by: Kaiyin Feng <kfeng@ucsb.edu>