ECE Postdoc Bei Shi receives a Best Paper Award at the Asia Communications and Photonics Conference (ACP)

December 13th, 2019

photo of bei shiShi and co-authors recognized for the development of a MOCVD-based heteroepitaxy approach that offers a practical path toward monolithic integration of InP lasers in silicon photonics

Bei Shi is a member of Professor Jonathan Klamkin’s iPL group and received his PhD degree in 2018 under the supervision of Prof. Kei May Lau from The Hong Kong University of Science and Technology (HKUST) for his work on MOCVD growth III-V quantum dot lasers and III-V/Si heteroepitaxy. Prior to that, he completed his undergraduate studies at Huazhong University of Science and Technology (Wuhan, China), with a BEng in optoelectronics in 2013. His current research interests are mainly focused on monolithic integration of III-V optoelectronic devices on Si, epitaxial growth of quantum dot/dash and III-V nanostructures for integrated photonics circuits.

The ACP Conference was held in Chengdu, China on November 2-5, 2019

Optica, "Continuous-wave Electrically Pumped 1550  nm Lasers Epitaxially Grown on On-axis (001) Silicon

Search for Shi's Publications on Prof. Klamkin's Pub List

Klamkin's Integrated Photonics Laboratory (iPL)